Info
Info
search:

< Page of 14125 >

Company News


Monday 20th February 2012
The firm's latest module uses the firm's indium gallium phosphide HBT technology
Monday 20th February 2012
Subsequent construction phases are planned for the next 7-10 years and will ultimately expand the company’s space to include approximately 300,000 square foot
Friday 17th February 2012
This marks the first agreement between the two companies and the first purchase of thin film CIS technology in NRG Solar’s history
Friday 17th February 2012
The corporate vice president of RFMD's Compound Semiconductor Group (CSG) is retiring
Friday 17th February 2012
These compact and efficient indium gallium phosphide MMPAs are suited to Quad-Band GSM/EDGE and dual-band WCDMA/LTE applications
Wednesday 15th February 2012
The LED upgrade is estimated to deliver 70 percent in energy savings
Wednesday 15th February 2012
The devices are manufactured using the firm's advanced indium gallium phosphide HBT MMIC technology
Wednesday 15th February 2012
The recent appointment of John F. O'Donnell will enable Opel to comply with the 25% Canadian residency requirement for the Board of Directors
Tuesday 14th February 2012
The new accreditation will leverage the firm's ability to provide higher quality lasers which are mainly based on a gallium arsenide platform
Tuesday 14th February 2012
The firm has suffered from reduced "Defence and Aerospace" and the "Networks" product demand. Revenues for these sectors were down 9% and 4% respectively from 2010 to 2011
Monday 13th February 2012
DenBaars has been recognised for his contributions to gallium nitride-based materials and devices for solid state lighting and displays
Monday 13th February 2012
The new aluminium indium gallium phosphide LD provides high power single-mode 660nm output with a built-in photodiode for use by system designers and OEMs
Monday 13th February 2012
The LED developer will use the cash to accelerate research, development, and production of LED chip and packaging technology for general illumination applications
Monday 13th February 2012
The global developer and manufacturer of industrial lasers is expanding its business
Friday 10th February 2012
The machine will be used for designing III-V component-based semiconductor devices
Friday 10th February 2012
The firm will present its financial status at a number of conferences in the United States and one in the UK
Friday 10th February 2012
He has been elected to membership in the National Academy of Engineering. He oversees research using MOCVD of III-V semiconductors to explore applications in lasers, quantum dots and other optical structures
Thursday 9th February 2012
The firm's LED MR16, built on its breakthrough gallium nitride on gallium nitride technology, is superior to halogen
Thursday 9th February 2012
The firm's latest Acrich2 will enable customers to lower carbon dioxide emissions whilst reducing their electricity bills
Thursday 9th February 2012
The new subsidiary will provide technical product support and regional systems solution development expertise in a number of areas including silicon carbide based power devices
Wednesday 8th February 2012
The firm says this certification reinforces its strong commitment and support from its management and its staff to minimising environmental impact
Wednesday 8th February 2012
Key applications of the silicon carbide power devices include photovoltaic microinverters, SMPS and UPS, motor drives, and induction heating
Wednesday 8th February 2012
The firm is already producing 6-inch and 8-inch sapphire wafers, which set the stage to support the manufacture of LED-based general lighting
Wednesday 8th February 2012
The SSJHB12R085-1 board shows the operation of the firm's silicon carbide JFETs in a cascode half-bridge configuration