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Company News


Monday 20th December 2010
GeneSiC Semiconductor, an innovator of novel Silicon Carbide devices for high temperature, high power, and ultra-high voltage applications, announces selection of its project titled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” by the US National Aeronautics and Space Administration for a Phase I SBIR award.
Monday 20th December 2010
Currently serving as CEO and Director of GT Solar, the industry veteran has held senior positions in a number of different technology industries.
Friday 17th December 2010
The optoisolator designed for use in harsh environments incorporates a high-efficiency GaAIAs LED with a peak wavelength of 850nm
Friday 17th December 2010
The firm has shipped theTurboDisc K465i MOCVD reactor to an LED manufacturer in Asia.
Friday 17th December 2010
The Indian research institute has ordered the Compact21 MBE research system for ultra-thin film electronic structures.
Thursday 16th December 2010
Osram’s latest LED provides an enormous increase in brightness and is anticipated be used in LED projectors as large as 2 meters in diameter.
Thursday 16th December 2010
The two new power amplifiers (PAs) are based on the firm’s proprietary 0.25 micron GaAs enhancement-mode pHEMT technology. They deliver high linearity and low power dissipation in an industry standard package and will enable a single design to support multiple frequencies and markets.
Thursday 16th December 2010
The firm’s LEDs are used in luminaires which light up NBC’s ‘America’s Got Talent’. Kieran Healy, lighting designer for the program commented “The entertainment industry now has remarkable, next-generation lighting. It truly exceeds all my expectations.”
Thursday 16th December 2010
Candace Lynch won the award for developing a counter-measure device technology involving laser material grown using orientation-patterned gallium arsenide.
Wednesday 15th December 2010
The firm’s new product line of Z-Rec 650V Junction Barrier Schottky (JBS) diodes should improve advanced high-efficiency data center power supply designs.
Wednesday 15th December 2010
The complete easy-to-use kit enables developers to leverage C2000 real-time control microcontrollers to innovate feature-laden, intelligent automotive and stage lighting applications. The kit offers flexibility for lighting systems that require a variety of LED types and string lengths.
Wednesday 15th December 2010
The net sales forecast is comprised of $2.8 to $2.9 billion of module sales and $0.9 to $1.0 billion of EPC/project development sales.
Wednesday 15th December 2010
The firm will report its Fiscal 2010 fourth quarter and year-end results on Tuesday, December 21, 2010.
Wednesday 15th December 2010
Skyworks has teamed up with HTC to deliver power amplifier modules and switch designs for next-generation platforms.
Tuesday 14th December 2010
The RFRX8888 IC is ideal for 1550 nm optical wavelength RF analog or digital overlay video receive circuitry employed in xPON FTTP ONT triplexer and quadplexer modules.
Tuesday 14th December 2010
The company restructuring also sees James Zhu, currently Chief Accounting Officer, to be appointed as interim CFO from the new year.
Sunday 12th December 2010
After the resignation of Gilles Bouchard who was CEO and President and on the company's Board of Directors, Bosco will hold the fort until a permanent successor is found, expected in the first half of 2011.
Friday 10th December 2010
Keithley is now an indirect wholly owned subsidiary of Danaher Corporation and, as a result of the merger, Keithley shares have already ceased trading on the New York Stock Exchange.
Friday 10th December 2010
The firm’s Board of Directors has authorized the repurchase of up to $15 million of the Company's common stock.
Friday 10th December 2010
The firm has unveiled its new TOPLED Compact 5630 which it says is a truly innovative addition to the world of LED backlighting for use in PCs and flat screens of all sizes.
Friday 10th December 2010
The high performance Sabre Series 11-02 designed for military, aerospace, industrial and utility applications are gallium arsenide (GaAs) based. The transmitters are high performance 850nm VCSELs while the optical receivers are based on a GaAs PIN structure.
Wednesday 8th December 2010
These amplifiers best operate in combination with the MGF4921AM, Mitsubishi Electric's low noise gallium arsenide (GaAs) high electron mobility transistor already available for the first stage of amplifying.
Tuesday 7th December 2010
The firm will present its latest results at the Barclays Capital 2010 Global Technology on December 9 2010.
Tuesday 7th December 2010
The firm has appointed Solekia as its distributor in Japan to expand sales for its growing ASIC product family.