GeneSiC Semiconductor, an innovator of novel Silicon Carbide devices for high temperature, high power, and ultra-high voltage applications, announces selection of its project titled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” by the US National Aeronautics and Space Administration for a Phase I SBIR award.
The two new power amplifiers (PAs) are based on the firm’s proprietary 0.25 micron GaAs enhancement-mode pHEMT technology. They deliver high linearity and low power dissipation in an industry standard package and will enable a single design to support multiple frequencies and markets.
The firm’s LEDs are used in luminaires which light up NBC’s ‘America’s Got Talent’. Kieran Healy, lighting designer for the program commented “The entertainment industry now has remarkable, next-generation lighting. It truly exceeds all my expectations.”
The complete easy-to-use kit enables developers to leverage C2000 real-time control microcontrollers to innovate feature-laden, intelligent automotive and stage lighting applications. The kit offers flexibility for lighting systems that require a variety of LED types and string lengths.
After the resignation of Gilles Bouchard who was CEO and President and on the company's Board of Directors, Bosco will hold the fort until a permanent successor is found, expected in the first half of 2011.
The high performance Sabre Series 11-02 designed for military, aerospace, industrial and utility applications are gallium arsenide (GaAs) based. The transmitters are high performance 850nm VCSELs while the optical receivers are based on a GaAs PIN structure.
These amplifiers best operate in combination with the MGF4921AM, Mitsubishi Electric's low noise gallium arsenide (GaAs) high electron mobility transistor already available for the first stage of amplifying.