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Company News


Wednesday 27th June 2012
The firm's XLamp LEDs in the Beibei district are estimated to deliver annual maintenance and electricity savings of US $3 million
Wednesday 27th June 2012
The EV LED has been designed to have higher thermal endurance, ensuring better reliability at higher temperatures
Tuesday 26th June 2012
Edwards' new iXH645H dry vacuum pump has been designed with nitride LEDs and III-V compound semiconductor MOCVD growth in mind. The company says it requires minimal maintenance and maximises uptime in harsh manufacturing environments
Tuesday 26th June 2012
With this move, Nitronex hopes to expand its market presence in the rapidly growing, high performance, GaN RF power device market using its gallium nitride on silicon technology
Tuesday 26th June 2012
SemiLEDs has agreed to make a one-time payment to Cree for past damages and to stop the importation and sale of its accused products in the United States
Monday 25th June 2012
Tom Mitchell, co-founder and president of Seagate Technology company, and formerly Thailand’s largest foreign employer, has been appointed as an independent Class I Director
Monday 25th June 2012
The new model can be used to assess electrical properties of solar cells as well as many III-V based device such as those based on gallium arsenide, indium phosphide and III-nitrides
Monday 25th June 2012
The fully owned subsidiary of the firm will no longer operate the CIGS 35 MWp Berlin, Germany production facility
Thursday 21st June 2012
The provider of sapphire substrates and products to the LED, RFIC, semiconductor, and optical industries has seen a 546 percent five-year revenue growth, with $134 million in revenue in 2011
Thursday 21st June 2012
The gallium nitride HIC is optimised for high gain and high powerand is suited to AESA, and PESA radar applications
Thursday 21st June 2012
The gallium nitride device is suited to applications such as high definition video broadcast and broadband data communication
Thursday 21st June 2012
The platform, which employs the firm's indium phosphide technology, was awarded for its disruptive impact on the optical network industry
Thursday 21st June 2012
The BGU8006 low-noise amplifiers, measuring just 0.65 x 0.44 x 0.2mm, have an extremely low noise figure of 0.6 dB and employ the firm's silicon germanium process
Thursday 21st June 2012
New 1200V silicon carbide diodes will enable manufacturers of products such as solar inverters, SMPS, induction heaters, UPS and motor drives to benefit from increased performance and reduced space
Wednesday 20th June 2012
The devices expand the company's portfolio of radio chipsets targeting cellular backhaul and other markets and rely on the firm's gallium arsenide pHEMT technology
Wednesday 20th June 2012
Wang has been working in the semiconductor industry in the US and China for many years and most recently held the position of Regional President of Novellus Systems in China
Wednesday 20th June 2012
The firm claims the two devices deliver the lowest noise figure of any integrated, packaged solutions for base station and similar applications
Wednesday 20th June 2012
The firm has developed a family of singlechip multiple-input receiver MMICs and transmitter MMICs (or transceivers), which incorporate gallium arsenide 3-D MMIC chip technology
Wednesday 20th June 2012
The improved gain of the new gallium arsenide devices will help microwave designers reduce the number of parts in their overall system
Tuesday 19th June 2012
The MMDS25254H 2300-2700 MHz device employs a gallium arsenide MMIC and indium gallium phosphide HBT technology
Tuesday 19th June 2012
Employing the firm's advanced indium gallium phosphide HBT MMIC technology, these modules are suited to for use in the world’s most widely used 3G/4G frequency bands
Tuesday 19th June 2012
At 1W power output, these TriQuint products are ideal for use in Very Small Aperture Terminals (VSATs) and point-to-point as well as point-to-multipoint microwave applications
Monday 18th June 2012
Designed for both "chip on board" and "system-in-package" (SiP) implementations, both product families employ the firm's gallium arsenide pHEMT and gallium indium phosphide HBT technology and operate over a wide range of operating voltages. The highly integrated FEMs significantly reduce external component count outside the core WiFi chipset
Monday 18th June 2012
The package, based on gallium arsenide technology, provides a smaller footprint than is typically available for a digital phase shifter with an internal driver