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Company News


Tuesday 4th February 2014
The EPC9013 high current development board incorporating 100 V eGaN FETs features multiple half-bridges in parallel
Tuesday 4th February 2014
Nearly all surfaces in a car can be individually illuminated with the III-nitride LED modules. All products are wireless, feature four dimming levels and light up in red, blue, green, orange, pink, turquoise or white
Monday 3rd February 2014
The gallium arsenide device features radiant intensity to 350 mW/sr at 1 A, optical power to 660 mW, and thermal resistivity down to 10 K/W
Friday 31st January 2014
Modulight, an ISO13485 certified laser manufacturer based in Tampere, Finland and San Jose CA, have announced two complementary additions to their OEM laser system platform. Whereas ML6500, released in 2013, introduced the smallest form factor and the widest wavelength spread high-power multimode laser modules in the industry, the new release complements this with the ML6400 single-mode laser systems and ML6600 multi-wavelength laser systems. The smaller sibling ML6400 footprints 2
Friday 31st January 2014
Quarterly Highlights: Quarterly Revenue Increases 6% Year-Over-Year To $288.5 Million
Friday 31st January 2014
II-VI Laser Enterprise, a subsidiary of II-VI Incorporated will debut new products from its expanded Seed Laser portfolio at Photonics West 2014. These include a new Fabry Perot (FP) laser diode module with ultra-broad band fiber Bragg grating (FBG) for high peak power pulsed Fiber Lasers and a Distributed Feedback (DFB) laser diode module designed for seeding of sub-nanosecond Fiber and Solid State lasers.
Friday 31st January 2014
GaN Systems Inc, a developer of gallium nitride power switching semiconductors, is presenting a technical paper at APEC describing the application of SPICE models developed for very high power GaN devices and integrated GaN drive circuits in automotive applications. At present, drive train power requirements of most hybrid vehicles (HVs) and electric vehicles (EVs) are met by using silicon IGBT devices, but it is expected that gallium nitride will take over as the technology of choice for this market in the near future, as GaN power transistors provide greatly enhanced performance in these applications, thanks to lower on-resistance and minimal switching losses compared to silicon-based semiconductors.
Friday 31st January 2014
Cree have announced that John Replogle, president and chief executive officer, Seventh Generation, has been appointed to the company’s board of directors, effective January 28, 2014.
Friday 31st January 2014
DILAS, the diode laser company, reports it will showcase the industry’s largest diode laser product portfolio at the Photonics West 2014 Conference from February 2-6, at the Moscone Center in San Francisco, CA, booth #4737.
Friday 31st January 2014
The new 6000-lumen LMH2 LED module from Cree offers color-quality greater than 90 CRI at a consistent efficacy of 85 lumens per watt across a wide range of color temperatures (3000 K, 3500 K and 4000 K). Cree state that the no-compromise LED solution is a suggested replacement for 100-watt ceramic-metal-halide lamps in high-ceiling applications, using 30 percent less power, lasting three times as long and delivering instant-on, dimmable light.
Wednesday 29th January 2014
The firm says its new ZR series LED troffer delivers excellent light quality and aesthetics for under $100
Wednesday 29th January 2014
One of the cameras is claimed to be the world's fastest 2048 pixel linescan camera. Both devices are designed specifically for spectral-domain optical coherence
Tuesday 28th January 2014
Mirenda is to direct EPC’s sales organisation in the Americas and assist customers in adopting eGaN FETs for high frequency, high performance power conversion systems
Tuesday 28th January 2014
The firm's solutions include GaAs based devices which enable custom platforms for microwave communications, handheld radios and navigation applications
Monday 27th January 2014
The aluminium nitride based devices are for high-power, surface-mount RF applications
Friday 24th January 2014
The Japanese firm will exhibit its UVB and UVC illumination sources at SPIE Photonics West in San Francisco in February
Friday 24th January 2014
The 3,200 lumen concept luminaire delivered greater than 200 LPW at 80 CRI at thermal equilibrium
Thursday 23rd January 2014
The board has been designed to include three µLED designs and as a reference standard LED for comparison
Thursday 23rd January 2014
The device can be used in surveillance, digital image processing, 3D measurement, pattern recognition and gesture detection
Wednesday 22nd January 2014
Newly appointed Andrew McQuarrie has more than twenty eight years of experience in semiconductor and related high technology businesses
Wednesday 22nd January 2014
The silicon carbide power devices will be used for unique dual configurations for increased safety, energy efficiency, and space savings
Wednesday 22nd January 2014
The devices are based on InGaAs technology
Tuesday 21st January 2014
The firm says this confirms the high quality and excellent environmental performance of Everlight’s optoelectronic and LED component and lighting products
Monday 20th January 2014
The gallium arsenide 10 to 17 GHz amplifiers are designed for communication applications