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Company News


Monday 7th January 2013
The provider of high-purity outsourced process tool parts, cleaning and surface treatment to the solar and LED industries has added quartz fabrication to its portfolio
Monday 7th January 2013
The RFFM4501E is based on the firm's InGaP HBT and GaAs pHEMT technologies and is designed for notebook and mobile equipment devices
Friday 4th January 2013
Kobayashi has been acknowledged for his work in gallium arsenide (GaAs) MMIC and indium phosphide (InP) technology
Thursday 3rd January 2013
The firm's board has agreed to award Dashen Fan up to 400,000 shares of restricted common stock
Thursday 3rd January 2013
Agostino Renna has been named president and CEO of GE Lighting Europe, Middle East & Africa
Thursday 3rd January 2013
The financing to the sapphire substrate manufacturer strengthens its liquidity position
Wednesday 2nd January 2013
The Korean firm was the only LED manufacturer who registered more than 10,000 patents, and was considered to be at the highest level in the industry in Patent Power
Wednesday 2nd January 2013
Presentations included talks on Atomic Layer Deposition process and applications, an overview of plasma etch, PECVD & TEOS processes & nanoscale applications
Monday 24th December 2012
The two companies have signed a strategic worldwide distribution agreement that will introduce LG Innotek’s entire portfolio of LED lighting solutions to the market
Friday 21st December 2012
With a new factory, Soitec will become one of the top three manufacturers of solar modules in the USA
Friday 21st December 2012
The firm has been honoured for its commercially viable technology that enables large-scale production of highly efficient inexpensive QDs
Friday 21st December 2012
The gallium arsenide based devices are suited for use as first-stage LNAs in base station receivers, tower-mounted amplifiers and repeaters
Friday 21st December 2012
The reactors will be used for compound semiconductor microelectronics and optoelectronics research
Friday 21st December 2012
The new strategic partnership will allow both companies to further their positions within the rapidly growing LED lighting market
Friday 21st December 2012
The firm is expanding its nanotechnology and IP portfolio with atomic layer deposition to enhance capability in new market opportunities such as semiconductors
Friday 21st December 2012
II-VI has acquired the manufacturer of optical systems and components, including visible, infrared, and laser‐based systems
Friday 21st December 2012
The reactor will be used for the developing II-VI semiconductors
Wednesday 19th December 2012
The provider of sapphire substrates has secured a patent to ensure the platens facing the wafers are continuously self-conditioned and self-optimised
Wednesday 19th December 2012
The latest patent relates to a method of combining beams from individual QCL sources to create a single beam of greater combined power and/or a multiple wavelengths
Wednesday 19th December 2012
Although operations related to the impact from the floods in Thailand are fully restored, yearly revenues have decreased by over 18 percent
Tuesday 18th December 2012
The provider for the recovery of used slurry from the photovoltaic and semiconductor industries is following in the footsteps if its sole customer, REC Wafer Norway AS
Tuesday 18th December 2012
The firm's gallium nitride on silicon LEDs have been honoured in the SSL category
Monday 17th December 2012
The process, developed by Toshiba and Bridgelux, will be used to produce chips manufactured from gallium nitride on 200mm silicon wafers
Monday 17th December 2012
The CEO of the III-V fibre laser and amplifier manufacturer continues to beneficially own 15 percent of IPG Photonics common stock