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Company News


Thursday 24th October 2013
AIXTRON a provider of deposition equipment to the semiconductor industry, today announced revenues of EUR 46.2m for the third quarter 2013, representing a slight increase compared to the previous quarter. In the same quarter last year, revenues amounted to EUR 62.2m. In spite of the lower percentage of final acceptances, which usually have a positive earnings effect, relative to Q2/2013 revenues, the Company's EBIT was improved even before unusual effects. This is particularly attributable to the positive cost effects and efficiency gains from the 5-Point-Program initiated in Q1/2013. Thus, the Company is on track to reduce its annual operating expenses by about 20%.
Wednesday 23rd October 2013
The company expects continued margin expansion, operating leverage and EPS growth
Wednesday 23rd October 2013
RIBER, provider of molecular beam epitaxy , recorded €10.2 million euros in revenues at the end of September 2013. Revenues for the third quarter of 2013 came to €2.4 million, compared with €7.3 million for the third quarter of 2012. RIBER is able to confirm its full-year revenue and profitability targets.
Wednesday 23rd October 2013
Soraa, developer of GaN on GaN LED technology, announced today that it has been awarded several million dollars in funding by U.S. Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) to pursue two projects related to the development of bulk GaN substrates for power electronics. The company has been selected under the ARPA-E's SWITCHES program to conduct the first phase of a 4 year, $3.2 million project to develop a revolutionary, U.S.-based technology for large-area, low-cost, high-quality bulk GaN substrates and to validate their performance in state-of-the-art power switches. Soraa also has an ongoing $4.75 million award from ARPA-E to develop ammonothermal bulk gallium nitride substrates for LEDs, vertical power devices, and next-generation power electronics. Soraa is partnering with Avogy Inc., a San Jose start-up and a pioneer in the development of GaN power devices on native GaN substrates, to evaluate the new substrates for power electronics applications and develop new, high performance vertical GaN transistors.
Tuesday 22nd October 2013
By mid-2014, the company plans to deliver to industry, and its development partners, a fully-integrated III-V monolithic optoelectronic semiconductor chip based on the company’s POET platform
Monday 21st October 2013
Skyworks Solutions have announced that its wireless connectivity front-end modules (FEMs) are being leveraged by Broadcom Corporation for use in several of the company’s 5G WiFi solutions, enabling some of the fastest download speeds available in access points, routers, DSL/cable gateways, PCs, smartphones and tablets. Skyworks’ complete 2.4 and 5 gigahertz (GHz) 802.11a/g/n/ac solutions integrate the power amplifier, filter, power detector, transmit/receive (T/R) switch, diplexer and associated matching in an ultra-compact form factor, delivering all the essential functionality from the output of the SOC to the antenna.
Monday 21st October 2013
Riber, a global manufacturer of molecular beam epitaxy (MBE), is announcing the sale of a 4” wafer capacity R&D MBE system to a leading material research institute in China
Monday 21st October 2013
The company is sampling its new gallium nitride (GaN) and gallium arsenide (GaAs) hybrid power doublers as well as its MMIC power doublers
Sunday 20th October 2013
The RFCM3316 gallium nitride device combines compact size with decreased current consumption. It allows CATV operators and MSOs an easy upgrade path to meet new DOCSIS 3.1 requirements
Sunday 20th October 2013
The firm's silicon carbide MOSFETs claim as much as 90% lower switching loss compared to silicon devices
Sunday 20th October 2013
The company’s ticker symbol will remain “FCS”
Thursday 17th October 2013
The company has an install base of more than 35,000 supported systems worldwide.
Wednesday 16th October 2013
Commercial high-lead versions of EPC’s enhancement mode gallium nitride (eGaN) FETs, the EPC2801, EPC2815, and EPC2818, are now available
Wednesday 16th October 2013
The Israel-based firm which has developed III-V based multi-junction solar cells has sold off its IP, inventory and equipment to Suncore
Wednesday 16th October 2013
The firm's LMH2 module family offers continued high-efficacy and high-quality performance
Monday 14th October 2013
Gallium nitride specialist EPC has signed an exclusive agreement with electronics distributor Digi-Key
Monday 14th October 2013
A new retrofit product, Ledriving Fog features daytime running light and fog light in a single light construction
Friday 11th October 2013
The compact surface mount plastic transistor offers 50 V bias in both pulsed and CW operation over DC-4.0 GHz
Friday 11th October 2013
After over 7 years, Turin is leaving the company to pursue other opportunities
Thursday 10th October 2013
The firm's edge high-output III-nitride based LED luminaires deliver breakthrough colour performance
Thursday 10th October 2013
The MIT scientist has been awarded for his pioneering developments in antimonide material and device research which have enabled an entire field of mid-infrared optoelectronics
Tuesday 8th October 2013
The new board member has over 20 years of experience in the semiconductor, telecommunication and processor industry
Tuesday 8th October 2013
The company is introducing three new MFCs which are suited to LED wafer growth. Brooks has also set up a new technology development centre in Irvine, Californi
Tuesday 8th October 2013
The firm has expanded its electronic materials catalyst portfolio