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Company News


Wednesday 23rd May 2012
Osram Opto's new flash LED harmonises form and function
Tuesday 22nd May 2012
Cree, Inc. today announced that John Kurtzweil has resigned as executive vice president-finance and chief financial officer, effective May 21, 2012, to pursue other opportunities, and that Michael McDevitt has been appointed CFO on an interim basis.
Tuesday 22nd May 2012
The devices are manufactured using the firm's unique indium gallium phosphide HBT technology
Tuesday 22nd May 2012
The manufacturer of compound semiconductor substrates, which has recently suffered partly due to the weak gallium arsenide substrate market, will present its financial outlook in California, New York and Minnesota in May
Tuesday 22nd May 2012
The firm's compound semiconductor multi-junction solar energy cells will be deployed in California
Monday 21st May 2012
The California solar deployment is a test bed for the U.S. DoD’s Energy Security Technology Certification Program
Monday 21st May 2012
Reusch will be creating benchmark power converter designs and assisting customers in the use of the company's proprietary gallium nitride FETs for high frequency, high performance power conversion systems
Monday 21st May 2012
The company is working with TSDI and Radiant to deploy its modules in existing and future railway stations
Monday 21st May 2012
The producer of devices such as 650nm III-V based VCSELs is taking on Hsin Chia to drive strategic expansion of the firm
Friday 18th May 2012
The global supplier of solar related products and III-V compound semiconductor device and process developer, has begun trading in this U.S. stock market
Friday 18th May 2012
The new product line of high speed 850nm gallium arsenide based VCSEL chips are compact and have an ultrahigh modulation rate
Friday 18th May 2012
Apart from in healthcare, where Quantum Dots hold a large market share, the technology is expected to play a major part in LED lighting and solar cells in the future
Thursday 17th May 2012
The patent allows the silicon carbide innovator to fine tune its vertical channel junction field effect transistors and diodes to get even closer to the unipolar theoretical limit
Thursday 17th May 2012
A new high performance gallium arsenide device has been revealed by RFMD
Wednesday 16th May 2012
The designer and developer of analogue III-V semiconductor devices and the gallium arsenide and gallium nitride innovator have come to an agreement to cross licensing patents
Wednesday 16th May 2012
The firm says that by using a depletion mode silicon carbide JFET, designers can achieve a fast start-up using no extra components such as an extra heat sink
Wednesday 16th May 2012
The FEM uses the firm's indium gallium phosphide and gallium arsenide technologies
Wednesday 16th May 2012
The indium phosphide chip manufacturer has will employ the Verian system as a requisitioning and approval workflow tool that integrates directly into SAP
Wednesday 16th May 2012
The device features an aluminium gallium arsenide LED and is suited to harsh application environments like motor control, measuring instruments as well as factory automation
Wednesday 16th May 2012
The agreement made by the provider of group III materials used in the MOCVD industry ,consists of a $20 million public bought‐deal offering and a $20 million concurrent private placement
Tuesday 15th May 2012
Eliot Parkinson is taking over from Adrian Meldrm at the firm's Cardiff III-V facility
Tuesday 15th May 2012
The UK-based firm has received an order for a physical vapour deposition which will be used for compound semiconductor growth. These will include gallium arsenide and aluminium nitride RF devices
Tuesday 15th May 2012
Peter Bauer is resigning as CEO of new gallium nitride-on-silicon developer Infineon Technologies AG effective September 30, 2012 due to health reasons
Monday 14th May 2012
The addition of the 3020 series will provide a smaller footprint with higher light density