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Company News


Thursday 3rd January 2013
The financing to the sapphire substrate manufacturer strengthens its liquidity position
Wednesday 2nd January 2013
The Korean firm was the only LED manufacturer who registered more than 10,000 patents, and was considered to be at the highest level in the industry in Patent Power
Wednesday 2nd January 2013
Presentations included talks on Atomic Layer Deposition process and applications, an overview of plasma etch, PECVD & TEOS processes & nanoscale applications
Monday 24th December 2012
The two companies have signed a strategic worldwide distribution agreement that will introduce LG Innotek’s entire portfolio of LED lighting solutions to the market
Friday 21st December 2012
With a new factory, Soitec will become one of the top three manufacturers of solar modules in the USA
Friday 21st December 2012
The firm has been honoured for its commercially viable technology that enables large-scale production of highly efficient inexpensive QDs
Friday 21st December 2012
The gallium arsenide based devices are suited for use as first-stage LNAs in base station receivers, tower-mounted amplifiers and repeaters
Friday 21st December 2012
The reactors will be used for compound semiconductor microelectronics and optoelectronics research
Friday 21st December 2012
The new strategic partnership will allow both companies to further their positions within the rapidly growing LED lighting market
Friday 21st December 2012
The firm is expanding its nanotechnology and IP portfolio with atomic layer deposition to enhance capability in new market opportunities such as semiconductors
Friday 21st December 2012
II-VI has acquired the manufacturer of optical systems and components, including visible, infrared, and laser‐based systems
Friday 21st December 2012
The reactor will be used for the developing II-VI semiconductors
Wednesday 19th December 2012
The provider of sapphire substrates has secured a patent to ensure the platens facing the wafers are continuously self-conditioned and self-optimised
Wednesday 19th December 2012
The latest patent relates to a method of combining beams from individual QCL sources to create a single beam of greater combined power and/or a multiple wavelengths
Wednesday 19th December 2012
Although operations related to the impact from the floods in Thailand are fully restored, yearly revenues have decreased by over 18 percent
Tuesday 18th December 2012
The provider for the recovery of used slurry from the photovoltaic and semiconductor industries is following in the footsteps if its sole customer, REC Wafer Norway AS
Tuesday 18th December 2012
The firm's gallium nitride on silicon LEDs have been honoured in the SSL category
Monday 17th December 2012
The process, developed by Toshiba and Bridgelux, will be used to produce chips manufactured from gallium nitride on 200mm silicon wafers
Monday 17th December 2012
The CEO of the III-V fibre laser and amplifier manufacturer continues to beneficially own 15 percent of IPG Photonics common stock
Friday 14th December 2012
The firm's latest cadmium telluride Series 3 module is the latest milestone on the First Solar's cost-efficiency roadmap
Thursday 13th December 2012
The manufacturer of III-V high-power fibre lasers and amplifiers is rewarding its stock holders as business is booming
Thursday 13th December 2012
The innovator of patented phosphors and phosphor components used in LED lighting has taken on Warren C Jenson. He has been involved in scaling some of the most important success stories of the last two decades
Wednesday 12th December 2012
A new silicon germanium device is the second in a series of devices aimed at accelerating the propagation of the next-generation Wi-Fi standard
Wednesday 12th December 2012
The III-V based devices support multiple format frequency transport in a single platform for C, X, Ku, and Ka-band applications