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Company News


Monday 7th October 2013
The manufacturer of consumer and off-grid products integrated with flexible thin-film photovoltaic modules is selling its mobile device chargers through Walmart's website
Sunday 6th October 2013
The manufacturer of gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates is now looking for someone to fill the CFO position
Friday 4th October 2013
Mr Willetts was in Oxfordshire to launch a major initiative promoting the county as a centre for scientific excellence and innovative technology, and took the opportunity to visit one of the UK’s leading businesses that is supporting the growth in nanotechnology based research and product manufacture. Oxford Instruments was the first commercial spin-out from Oxford University in 1959 and has a worldwide reputation for its innovative, high-technology tools and systems.
Friday 4th October 2013
Veeco Instruments announced today that the University of Nottingham, United Kingdom, purchased two GENxplor™ R&D Molecular Beam Epitaxy (MBE) Systems for its School of Physics and Astronomy. The systems will enable the growth of high quality, large area layers of graphene and boron nitride for advanced electronic and optoelectronic applications.
Thursday 3rd October 2013
The Harmonia lamp, based on the firm's III-nitride LED chips, has been honoured for its slim, sleek design and dual-sided illumination that can build light harmony in any surroundings
Thursday 3rd October 2013
Specifically designed for the commercial and residential markets, the cost optimised LEDs are based on the firm's Vero product line
Thursday 3rd October 2013
The EPC9017 development board features Enhancement Mode Gallium Nitride (eGaN) FETs in parallel operation using optimum layout techniques to increase current capability and efficiency
Wednesday 2nd October 2013
The firm's X-Band Core Chip combines a CMOS logic driver with a gallium arsenide transmit/receive MMIC within a single QFN package
Wednesday 2nd October 2013
The firm has developed III-nitride LED technology to provide consumers with practical solutions that are accessible, flexible and intuitive
Tuesday 1st October 2013
The firm has shipped its QDEF devices to LCD manufacturers to bring perfect colour and high energy efficiency to millions of devices
Monday 30th September 2013
The AURP has honoured Emcore for its III-v solar cell technology development
Friday 27th September 2013
The firm received many of its orders from Research laboratories
Thursday 26th September 2013
A novel modular, SMT-optimised approach unlocks the full promise of gallium nitride in plastic for radar applications
Thursday 26th September 2013
The new Praxair China Technology Centre is a state-of-the-art facility for applications engineers and Research and Development
Thursday 26th September 2013
With this board space reduction, network infrastructure OEMs can reduce the size of radio systems and their bills of materials
Wednesday 25th September 2013
In the high-power LUXEON Q III-nitride device, high flux and high efficacy are achieved in a standard 3535 surface-mount package
Wednesday 25th September 2013
The miniature devices are composed of Oclaro's Opbext aluminium indium gallium phosphide (AlInGaP) and aluminium gallium arsenide (AlGaAs) laser diodes with externally adjustable optics. They also incorporate a Panasonic aspherical glass lens in a rugged modular anodised aluminium housing
Tuesday 24th September 2013
MBD has increased the reach of its indium phosphide DTNX platform to new high-bandwidth sites in DC and Virginia
Tuesday 24th September 2013
When combined with red nitride or other red phosphors, arrangements also covered by these patents, CRIs up to 98 (out of 100) have been demonstrated. The firm's latest technology is also instrumental to meeting new standards such as California’s Quality LED Lamp Specification
Monday 23rd September 2013
The new variant of the III-nitride based LED Osram Ostar Headlamp Pro enables the simple implementation of Advanced Forward Lighting Systems
Monday 23rd September 2013
The compact indium phosphide (InP) PIC narrow linewidth μITLA and compact ICR enable higher port density on 100G and above coherent line cards and transponders
Monday 23rd September 2013
The expansion boosts the firm's internal assembly and advanced flip chip capabilities
Friday 20th September 2013
The firm's new silicon carbide MOSFETs provide higher efficiency, power density and lower system BOM for power conversion systems