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Company News


Thursday 29th May 2014
The indium phosphide devices are designed for commercial and military use
Thursday 29th May 2014
The new 1.5mm x 1.2mm high IP3 mixer, image reject mixer, and low noise active mixer all incorporate GaAs. They provide an optimal balance of performance, space savings, and cost effectiveness
Thursday 29th May 2014
This is purported to be the first LED of its size that enables colour-consistent 50-Watt halogen performance
Thursday 29th May 2014
The Chip on Board modules are available in variety of CCT and CRI options and are compatible with optics, drivers, and holders readily available from third party suppliers
Wednesday 28th May 2014
The new 802.11ac power amplifier uses the firm's patented indium gallium phosphide technology
Wednesday 28th May 2014
The custom gas system performs automatic gas cylinder switchover and is suited to low flow applications or reactors operating in a limited space
Wednesday 28th May 2014
The semiconductor equipment maker is supporting the university's Department of Research and Innovation
Wednesday 28th May 2014
The compact III-nitride based Acrich LEDs result in designs where fewer LEDs are used, leading to smaller and lighter fixtures
Tuesday 27th May 2014
The mutual decision sees CFO Wolfgang Breme leaving the group
Tuesday 27th May 2014
The CIGS solar cell provider has seen increased sale of its new solar systems
Tuesday 27th May 2014
The two new III-nitride based LEDs are suited for general illumination and solid state lighting
Tuesday 27th May 2014
The aircraft is designed for domestic and international commercial, public safety and defence applications
Monday 26th May 2014
Due to Emcore licensing Everlight some of it patents, the suit, is principally a dispute between Everlight and Nichia
Thursday 22nd May 2014
Online tool from Osram Opto Semiconductors provides LED characteristics for downloading
Thursday 22nd May 2014
Company earns awards for 16th straight year from survey of semiconductor equipment customers
Thursday 22nd May 2014
First Solar, Ingenero to provide solar power to Rio Tinto Alcan bauxite mine Initial phase to offset up to 20 percent of the existing grid demand and reduce diesel usage
Thursday 22nd May 2014
Cree introduces the XLamp XP-L LED, which claims to be the first commercially available single-die LED to achieve breakthrough efficacy of up to 200 lumens per watt (LPW) at 350 mA. Delivering up to 1226 lumens in a 3.45 mm x 3.45 mm package, the game-changing Cree XLamp XP-L LED enables an immediate performance increase of 50 percent or more as a drop-in upgrade for lighting designs based on Cree’s market-leading XLamp XP-G LEDs.
Thursday 22nd May 2014
Efficient Power Conversion Introduces Plug and Play 97% Efficient Half-Bridge Converter DrGaNPLUS Evaluation Board Featuring Gallium Nitride Transistors
Thursday 22nd May 2014
Global Communication Semiconductors have Announced Two New Foundry Processes Including a New InGaP HBT Process for the 802.11ac and 4G LTE PA Applications and an E-mode pHEMT Low Noise Process to Address the High-Performance Receiver Requirements
Wednesday 21st May 2014
New SiC MOSFETs complemented with SiC power modules, significantly improving system efficiency in high-voltage applications and delivering maximum power efficiency to help customers develop lighter, smaller, more reliable system designs
Wednesday 21st May 2014
EMCORE a provider of compound semiconductor-based components and subsystems for the fiber optics and space solar power markets, have announced that it has expanded its recently launched DOCSIS 3.1 laser line with the release of the Model 1616A DOCSIS 3.1, 1310 nm DFB Laser Module for CATV (Cable Television) applications. The new 1616A laser module is compliant with the new DOCSIS 3.1 standard, supporting operational bandwidth up to 1.2 GHz
Wednesday 21st May 2014
Megasonic developer applies uniform acoustic energy to spinning substrates to gently dissolve and remove films and residues without damaging fragile device structures
Tuesday 20th May 2014
GaN Systems launches five new normally-off 100V GaN transistors in optimised low inductance and thermally-efficient packaging
Tuesday 20th May 2014
GaN Systems, a developer of gallium nitride power switching semiconductors, has announced five new normally-off 650V GaN transistors optimised for high speed system design.