Info
Info
search:

< Page of 13937 >

Company News


Friday 31st May 2013
The firm's latest III-nitride XH LEDs are claimed to deliver breakthrough reliability and performance
Friday 31st May 2013
The firm has released GaAs (gallium arsenide) and gallium nitride products to speed up uninterrupted connectivity
Friday 31st May 2013
The firm's gallium nitride power doublers provide excellent output power, linearity, and bit error rate performance for CATV system amplifier and deep fibre node applications
Thursday 30th May 2013
The gallium arsenide radio frequency devices serve the 3G/4G cellular backhaul and related markets
Thursday 30th May 2013
The firm's III-nitride LEDs have massive potential, particularly within the water space
Thursday 30th May 2013
The firm has qualified its gallium nitride transistor for military and satellite communications, broadband, RADAR, wireless and point to point microwave applications
Wednesday 29th May 2013
The gallium arsenide MMIC based on E-pHEMT and InGaP HBT technology enables real-time digital adjustment of phase and amplitude to boost efficiency and linearity
Tuesday 28th May 2013
Yole and the SiC Power Centre and the Enterprise Europe Network are hosting a European event, taking place between June 9th and 11th in Stockholm, Sweden
Tuesday 28th May 2013
The program will enable students to present their research, learn from international speakers, and network with other students in the field of optics
Tuesday 28th May 2013
Hiden Analytical is offering the choice of three initial equipment levels to suit a broad spread of budget capacities
Monday 27th May 2013
The aluminium gallium arsenide based PIN diode series delivers cost, time and space savings for high-power switching applications
Friday 24th May 2013
The convertible senior notes will be due in 2018. Infinera expects to use the net proceeds of the offering for general corporate purposes, including working capital and potential strategic projects
Friday 24th May 2013
Holders may require Infinera to repurchase their Notes at a purchase price equal to the principal amount thereof plus accrued and unpaid interest to, but excluding, the repurchase date
Thursday 23rd May 2013
The talks included GaN-on-silicon, HB-LED, SiC and III-V developments
Thursday 23rd May 2013
Dell'Oro says that indium phosphide (InP) PIC specialist Infinera accounts for 29 percent of all long-haul 100G ports sold since the long-haul 100G market emerged in 2010
Wednesday 22nd May 2013
The low noise broadband gallium arsenide based amplifier is suited for small cell and macrocell transceivers and applications requiring high linearity and high RF output power
Wednesday 22nd May 2013
Designers using gallium nitride power transistors can now go to one place to find a concentration of articles, videos, and textbooks to accelerate their products to market
Wednesday 22nd May 2013
The III-V based detector supports systems for next generation networks using 400 Gbit/s or 1 Tbit/s coherent detection-based optical transmission
Wednesday 22nd May 2013
New board member Bernhard Stapp brings more than a dozen years of executive experience in LED lighting technologies to Aledia
Monday 20th May 2013
The firm's expansion targets high-speed indium phosphide Core network applications across Russia and Eastern Europe
Monday 20th May 2013
The MVH3000D product line of tiny chips is designed to fulfil the needs of a wide range of applications and markets. These include consumer electronics, health & fitness, industrial, building automation, appliances, and wireless sensing (the internet of things)
Friday 17th May 2013
This device characterisation allows customers to evaluate device performance for immediate use within designs and gain experience of the WaveForm Engineering process
Friday 17th May 2013
The lineup includes an 80 W fibre laser pump, an 150ps DFB seed laser, high performance diode bars at 10xx and 14xx nm and higher power 63x red diode lasers in a smaller package
Friday 17th May 2013
The gallium arsenide based diodes are suited to high frequency sensor applications