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Industry News


Tuesday 1st October 2013
Infineon has still maintained leadership in this sector
Friday 27th September 2013
The US Department of Energy has provided the funding to the firms to design power-saving GaN (gallium nitride) and SiC (silicon carbide) semiconductors for next generation vehicles
Friday 27th September 2013
The CdTe (cadmium telluride) solar cell manufacturer will design and build the project in the 2,000-acre segment of the Moapa Band of Paiutes tribal land
Friday 27th September 2013
The firm's latest SiC (silicon carbide) - based LEDs follow on from the XQ series launched in May and are 78 percent smaller than Cree's XP-E2 modules
Thursday 26th September 2013
The packaged LED market will balloon from $13.9 billion in 2013 to $16 billion by 2018, driven mainly by general lighting and completed by display applications
Thursday 26th September 2013
The aluminium nitride templates, produced using HVPE, have been sold to a major Asian LED manufacturer
Wednesday 25th September 2013
A collaborative project set up by the German Ministry will develop gallium nitride power devices for applications in aeronautics and communications electronics
Wednesday 25th September 2013
Celebrate 10 Years of Success Together With LED Industry’s Largest Event
Wednesday 25th September 2013
The 3.8mm diameter super-bright device delivers more power but uses less energy. This is thanks to new processes, including an optimised waveguide structure and fine-tuning of the laser device structural parameters
Tuesday 24th September 2013
The modified III-V structure has four solar subcells and was grown using a new technology. The process allows the connection of two semiconductor crystals, which otherwise cannot be grown on top of each other with high crystal quality
Monday 23rd September 2013
Bandgap materials GaN and SiC are generating significant buzz globally. Strategy Analytics expects SiC to be the primary replacement technology for silicon power devices, while GaN seeks initial commercial traction in applications with breakdown voltages of less than < 600V and power requirements of less than 5kW
Friday 20th September 2013
The latest indium phosphide micro-iTLA tuneable form factor enables next generation 100G coherent networks
Thursday 19th September 2013
The cash will be used to bring the gallium arsenide (GaAs) based Solink technology, to the next stage of development. The firm's high efficiency photovoltaic ink will increase efficiency of solar modules by up to 25 percent
Thursday 19th September 2013
The CXA high-density III-nitride based arrays enable the next generation of LED spot lights
Thursday 19th September 2013
The move to gallium nitride-on-silicon carbide is to reduce platform cost and address growth opportunities in power applications
Thursday 19th September 2013
The compact Osram III-nitride based LED is suited for automotive headlights now comes with two chips for greater brightness
Wednesday 18th September 2013
Cooperation between the firms will accelerate development of a cost efficient solution for large area ALD in the thin film PV & display market
Wednesday 18th September 2013
Tensile-strained germanium tin (GeSn) MOSFET devices on silicon have been developed using solid phase epitaxy
Tuesday 17th September 2013
The firm says over the past two weeks many customers in multiple nations have said that Kyma has by far the best aluminium nitride templates on the market
Tuesday 17th September 2013
GaN Systems will explain how technology and trends in wide-bandgap gallium nitiride devices means smaller, lighter and more efficient electronics
Tuesday 17th September 2013
While cost may not be the advantage, its innovative character may lead to new insights of using silicon carbide as an optoelectronic material
Friday 13th September 2013
The aim is to develop and manufacture TeraXion’s new modulator series and covers its InP high-speed modulators for coherent transmission systems at 100 Gb/s and more
Thursday 12th September 2013
The company's newest CPV module is certified to both IEC and UL standards
Thursday 12th September 2013
The market for phosphors and some of the critical IP are currently dominated by Mitsubishi and Denka, which have acquired nitrides and oxynitrides licenses from NIMS. But other players include Intematix, Beijing Yuji and Dow Electronics