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Industry News


Thursday 14th October 2010
The facility is the only germanium (Ge) wafer manufacturer with high volume Ge wafer production facilities on two continents, North America and Europe.
Thursday 14th October 2010
Progress is being made on Ge and III-V alternative channel material devices, although this area will require more effort and more resources to demonstrate manufacturable solutions.
Thursday 14th October 2010
UCSB claims that contrary to popular belief, substitutional carbon on a nitrogen site is a very deep acceptor and accounts for the yellow luminescence in GaN.
Thursday 14th October 2010
The plants will boost the company's annual manufacturing capacity by nearly 500 MW with each new plant creating approximately 600 green jobs.
Wednesday 13th October 2010
The modules produced for GE by Solar Frontier will be part of GE’s utility-scale solar projects. The contract will ensure that its customers have a reliable supply of standard-setting thin-film solar modules for large ground-mount and roof-top installations.
Wednesday 13th October 2010
The 100~960 MHz GaN amplifier has an efficiency of between 50 and 70%. RFHIC says high production yields are guaranteed within the SMD type package.
Wednesday 13th October 2010
RFMD is supplying Samsung with three highly integrated WiFi components which combine small footprint with superior performance.
Wednesday 13th October 2010
The new technology can be implemented in material and tool processing of LEDs and VCSELs and diffractive and refractive optical elements.
Wednesday 13th October 2010
The company has also announced upgrades to its line of DSS ingot growth furnaces.
Wednesday 13th October 2010
The money will be used to provide deposition production tools in the manufacture of solar modules.
Wednesday 13th October 2010
The firm’s 200 Series offers low cost, tool-free installation is the ideal solar solution for large commercial rooftops.
Tuesday 12th October 2010
This latest development will see that the thin-film flexible monolithically integrated CIGS module manufacturer can aggressively push into the commercial, industrial and residential rooftop markets.
Tuesday 12th October 2010
The reactor will join FOREPI’s multiple high throughput Planetary Reactor systems at the manufacturing facility in Lung-Tan, Taoyuan, Taiwan.
Tuesday 12th October 2010
Johns Manville (JM) will test Ascent Solar’s thin-film Copper Indium Gallium (di)Selenide (CIGS) at an existing installation to evaluate performance against current laminated modules.
Monday 11th October 2010
Johnson Controls will build, operate, maintain and provide lifecycle support for solar installations built using Concentrix CPV technology around the globe.
Monday 11th October 2010
The ‘Hyundai Avancis’ joint-venture will produce an annual power output of 100 MW based on CIGS thin-film technology, designed for roofs and solar fields
Monday 11th October 2010
The company aims to become the industry-leading compound semiconductor supplier by strengthening its product lineups in the photocoupler, optical storage, RF switch, GaAs FETs and GaN based markets.
Monday 11th October 2010
The new technology is expected to revolutionize the global energy and communications infrastructure and create U.S. jobs in the process.
Sunday 10th October 2010
The company says that its latest record was reached in the new generation of Aquarius-series chips and reaches 168 lm/W at a dominant wavelength of 610 nm driven by a 20mA current.
Saturday 9th October 2010
Reportlinker.com has announced that a new market research report is available in its catalogue entitled “Building Integrated Photovoltaics”.
Friday 8th October 2010
AIXTRON AG today announced a new order for two AIX 2800G4 HT 42x2-inch configuration deposition systems from Tongfang.
Thursday 7th October 2010
SEMI Advocates for simplifying the EU Framework Research Programme
Wednesday 6th October 2010
Ohio Governor Ted Strickland today announced agreements to create Turning Point Solar, a 49.9 MW solar array to be built on strip-mined land adjacent to The Wilds nature conservancy.
Wednesday 6th October 2010
Researchers at the Georgia Institute of Technology have developed a new “templated growth” technique for fabricating nanometer-scale graphene devices.