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Industry News


Tuesday 12th March 2013
Single chip ultra-violet LEDs combine high efficiencies with high output powers
Tuesday 12th March 2013
The tool will be used for research and development of various antimonide and arsenide-based III-V optoelectronic devices
Tuesday 12th March 2013
The firm has developed an indium phosphide device for 100G coherent CFP2. The module enables a new generation of pluggable devices for metro and long-haul markets
Monday 11th March 2013
The MBE tool will be used for the preparation of silicon and germanium-based thin nanostructured layers
Monday 11th March 2013
Thanks to UV curing, UV LEDs should become a $270 million business by 2017, and could hit $300 million if new applications boom
Friday 8th March 2013
Many of the largest players in the compound semiconductor industry were acknowledged by their customers in the voting process
Thursday 7th March 2013
Advances in chip technology, the benefits brought by the latest manufacturing tools and insights into market trends all featured at CS International Conference.
Wednesday 6th March 2013
The firm's III-nitride based LED bulb is shaped like a traditional light bulb but works more efficiently and lasts 25 times longer. It provides a compact optically balanced light source within a real glass bulb to deliver warm light to consumers
Tuesday 5th March 2013
The firm's new technology builds on its basic GaAs approach, but implements a second junction with indium gallium phosphide (InGaP) as the absorber on top of the base cell. The technology will enable significant battery life extension in mobile devices
Tuesday 5th March 2013
The result builds on the previous GaAs (gallium arsenide) based VCSEL milestone. It is a further verification that III-Vs can compete with silicon CMOS in WDM capable optoelectronic devices and functions, FETs and bipolar devices
Tuesday 5th March 2013
The firm will show how its indium phoshide based platform, which enables integrated OTN switching and intelligent networking, can lower total cost of ownership for cable operators
Tuesday 5th March 2013
A new white paper written by SEMI analysts contains recommendations to move beyond trade litigation and encourage an accelerated path towards dispute resolution
Monday 4th March 2013
The firm's InP (indium phosphide) based DTN-X platform will provide links between Italy, Greece, Turkey, Israel and Cyprus
Monday 4th March 2013
The company's QC3 diffractometer is suited for analysing III-V semiconductor and nitride based LEDs. The production worthy system can accommodate up to 20 wafers in a single measurement process
Friday 1st March 2013
The semiconductor expert will once again chair the premier conference for the compound semiconductor industry
Thursday 28th February 2013
In the future, the firm's cadmium telluride module will be optimised for volume manufacturing
Thursday 28th February 2013
The firm's 600V gallium nitride HEMTs employ patented EZ-GaN technology, achieving a vital milestone for broad adoption in power conversion
Wednesday 27th February 2013
Solar Junction's high efficiency III-V multi-junction solar energy cells combined with Amonix's ground breaking module technology will increase efficiencies while driving CPV costs down
Wednesday 27th February 2013
The CurX UV-LED module is claimed to provide the highest irradiance available for UV printing and curing applications
Wednesday 27th February 2013
The silicon carbide junction transistors will increase conversion efficiency and reduce the size, weight and volume of power electronics
Tuesday 26th February 2013
The tools, which will be used to manufacture GaN (gallium nitride) UHB LEDs, shows great endorsement of previously ordered AIX G5 systems
Monday 25th February 2013
The HVPE system is expected to lower the cost of III-nitride LED production and accelerate adoption in lighting and power electronics
Friday 22nd February 2013
The new WTR1625L and RF silicon front end chips harness radio frequency band proliferation, enabling OEMs to develop thinner, more power-efficient devices with global 4G LTE mobility
Thursday 21st February 2013
The orbital-built satellite will use the firm's BTJ triple-junction III-V solar cells delivering 3,750W of power at the end of life