The new module, which incorporates an 850 nm gallium arsenide based VCSEL, is claimed to increase port density and deliver twice the data bandwidth of the current generation of fibre channel devices at nearly the same power level.
IMS Research has lowered its 2011 gallium nitride MOCVD forecast by 24% to 833 reactors, which still represents 4% growth over 2011. In 2012, China is expected to continue to dominate the market for GaN MOCVD tools, market, but shrink to 61% in Q4’12 as Taiwan and Korea rebound.
The new gallium nitride substrates come in form factors of 10 mm x 10mm squares and 18 mm x 18 mm squares. The firm is also developing 2” diameter and larger n+ bulk GaN substrates for volume production.
The firm has optimised the XLamp LED system design to lower system costs. Cree is also offering lighting-fixture companies access to its remote-phosphor patents to drive the LED lighting revolution forward.
The firm, which is also tripling its manufacturing capacity, says the two new contracts for LED sapphire manufacturing equipment and technology highlight the advantages of its unique c-axis sapphire platform.
The Asia Pacific subsidiary of Germany-based Phoenix Solar AG will install two 1 MWp facilities in the states of Tamil Nadu and Gujarat. The systems will use MiaSolé CIGS modules and First Solar cadmium telluride modules.
SemiSouth says its latest silicon carbide devices are 15% cheaper than conventional SiC JFETs and are particularly suited for high end audio amplifier designs demanding the best linearity performance and lowest distortion.