Info
Info
search:

< Page of 14000 >

Industry News


Friday 19th August 2011
The new module, which incorporates an 850 nm gallium arsenide based VCSEL, is claimed to increase port density and deliver twice the data bandwidth of the current generation of fibre channel devices at nearly the same power level.
Thursday 18th August 2011
The firm is celebrating its gallium arsenide and gallium nitride technology products, which have revolutionised the RF industry
Wednesday 17th August 2011
Strategy Analytics says that LED manufacturers are improving market penetration by increasing the functionality of their products and making them easier for consumers to use.
Wednesday 17th August 2011
The firm’s second generation gallium nitride based power transistor delivers high frequency switching with enhanced performance at 200 V and 100 milliohms.
Monday 15th August 2011
The firm’s HELP4 LTE power amplifier, which uses indium gallium phosphide technology enables the LG Android smartphone.
Monday 15th August 2011
IMS Research has lowered its 2011 gallium nitride MOCVD forecast by 24% to 833 reactors, which still represents 4% growth over 2011. In 2012, China is expected to continue to dominate the market for GaN MOCVD tools, market, but shrink to 61% in Q4’12 as Taiwan and Korea rebound.
Monday 15th August 2011
TFG Radiant Group of China and Ascent Solar intend to build the first non-U.S. and largest CIGS FAB using Ascent's technology.
Friday 12th August 2011
Gallium nitride epitaxial wafer production capacity in China will grow over 300% in just 2 years (2010-2012).
Friday 12th August 2011
The firm has unveiled the TENUIS GEN 2 process system for CIS and CIGS modules which is claimed to offer significant cost advantages in the application of buffer layers on thin film solar cells.
Wednesday 10th August 2011
The performance gap between conventional LEDs and those built on silicon is closing fast thanks to the efforts of Bridgelux
Tuesday 9th August 2011
The company is developing 8-inch commercial grade performance for gallium nitride-on-silicon based LEDs.
Monday 8th August 2011
The vGaN products provide a low-cost, high-quality epitaxial surface for the growth of gallium nitride devices such as LEDs or field-effect transistors (FETs).
Friday 5th August 2011
The cadmium telluride solar cell manufacturer has signed a contract with PG&E and Sempra Generation for 150 MW of renewable power in Nevada.
Thursday 4th August 2011
The new gallium nitride substrates come in form factors of 10 mm x 10mm squares and 18 mm x 18 mm squares. The firm is also developing 2” diameter and larger n+ bulk GaN substrates for volume production.
Wednesday 3rd August 2011
The firm is installing roof-top solar systems at the Hallesche FC and Borussia Dortmund football stadiums.
Wednesday 3rd August 2011
The firm has optimised the XLamp LED system design to lower system costs. Cree is also offering lighting-fixture companies access to its remote-phosphor patents to drive the LED lighting revolution forward.
Wednesday 3rd August 2011
The firm, which is also tripling its manufacturing capacity, says the two new contracts for LED sapphire manufacturing equipment and technology highlight the advantages of its unique c-axis sapphire platform.
Wednesday 3rd August 2011
The firm’s III-V compound semiconductor based modules have been used at a Conad Sicilia distribution centre in Modica, Sicily.
Tuesday 2nd August 2011
Asian governments are investing in LED technologies and concentrating on reducing costs; China intends for its LED lighting products to be 40% below the market price by 2015.
Tuesday 2nd August 2011
The Asia Pacific subsidiary of Germany-based Phoenix Solar AG will install two 1 MWp facilities in the states of Tamil Nadu and Gujarat. The systems will use MiaSolé CIGS modules and First Solar cadmium telluride modules.
Tuesday 2nd August 2011
SEACOM, a leading pan-African telecommunications provider, has used Infinera's indium phosphide PICs to achieve what both firms believe is the first ever 500Gb/s successful trial in Africa.
Monday 1st August 2011
SemiSouth says its latest silicon carbide devices are 15% cheaper than conventional SiC JFETs and are particularly suited for high end audio amplifier designs demanding the best linearity performance and lowest distortion.
Monday 1st August 2011
Thermal Technology says its modified-Kyropoulos method is the most productive tool on the market with large crystal size and a short growth cycle.
Monday 1st August 2011
The large-area 33% efficient gallium arsenide based solar cells are used in the Atlantis shuttle, which has been released into low-earth orbit.