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Industry News


Friday 4th April 2014
Silicon based manufacturers, Intel and Arista spearheaded the creation,
Thursday 3rd April 2014
Using hybrid HVPE-Ammontermal approaches allows the manufacture of gallium nitride material for high-end applications. The key is that a low dislocation density is achieved
Wednesday 2nd April 2014
Diamond materials are anticipated to triple power density over silicon carbide
Wednesday 2nd April 2014
Internet Solutions is the first company to deploy the firm's indium phosphide (InP) based super-channels in South Africa
Tuesday 1st April 2014
The tool will be used in the production of advanced LEDs and solar cells and silicon based devices
Tuesday 1st April 2014
The agreement will enable MACOM to deliver GaN wafers grown on 100mm, 150mm and 200mm silicon substrates for RF applications
Tuesday 1st April 2014
Wide band gap semiconductors may reduce the size of a vehicle cooling system by about 60 percent and cut the size of a fast DC charging station
Tuesday 1st April 2014
The innovator of III-V devices has also taken on ex Fairchild executive Daniel DeSimone as VP of Product Development at the POET laboratories
Monday 31st March 2014
The wafers will be used in the next generation CMOS program
Monday 31st March 2014
The LUXEON 3020 emitter crosses the 1,000 lumens per dollar threshold
Friday 28th March 2014
The LMH2 LED GaN module family enables the complete replacement of 150-watt ceramic metal halide lamps
Friday 28th March 2014
The company's III-nitride on SiC LED technology is continuing to push the boundaries of LED performance
Friday 28th March 2014
The firm's long-haul super-channel technology utilise indium phosphide PIC technology
Friday 28th March 2014
The 802.11ac wireless connectivity in the tab is enabled by Anadigics' indium gallium phosphide technology
Thursday 27th March 2014
The compact scale GaN-on-silicon package is claimed to reduce mounting area by 90 percent
Thursday 27th March 2014
all line-up of LED component solutions
Wednesday 26th March 2014
The gallium nitride on silicon dotLED is 0.2mm in height and designed for applications that demand low profile electronic components
Wednesday 26th March 2014
The III-V multijunction cells will be used for the SNC global navigation satellite system
Wednesday 26th March 2014
Si-Ge-C superlattice films enable efficient light absorption and emission across an extended wavelength range, from UV to MWIR
Tuesday 25th March 2014
The contract is aimed at the company transferring 0.14 ┬Ám gallium nitride technology and manufacturing on 6 inch wafers to produce air force millimetre wave devices
Monday 24th March 2014
The Tokyo based firm is offering gallium nitride MOCVD for deposition on sapphire substrates
Monday 24th March 2014
The Moapa Southern Paiute Solar project is the first utility-scale solar project on tribal land and will deliver much needed economic benefits to the Tribe and Nevada
Friday 21st March 2014
The new white III-nitride chip series implements a novel phosphor coating process
Friday 21st March 2014
35 presentations equipped delegates with a comprehensive overview of the compound semiconductor industry