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Industry News


Friday 21st December 2012
A new consortium has been set up to develop III-V diode-laser mini-bars for industrial applications
Wednesday 19th December 2012
The firm's XLamp MK-R LEDs grown on silicon carbide deliver record-breaking efficacy and next-generation price-performance for LED arrays
Tuesday 18th December 2012
The analyst group are releasing a detailed report on the most likely 2013 scenario
Monday 17th December 2012
The price of gases used in III-V MOCVD growth will be increased by between 15 and 30 percent in the US, Canada and Puerto Rico
Monday 17th December 2012
Scientists have demonstrated a 50 percent improvement of the dielectric breakdown field in silicon carbide MOSFETS
Friday 14th December 2012
The market will peak at $13.5 billion in 2015 but will remain relatively flat after that. This is mainly due to fewer LED replacements being required each year due to longer lifetimes
Friday 14th December 2012
The three year project announced by imec, will combine III-V high speed VCSELs with various silicon components to allow new functionalities such as wavelength multiplexing
Friday 14th December 2012
The ARPA-E project will concentrate on using aluminium nitride technology to more efficiently control the flow of electricity across high-voltage electrical lines
Friday 14th December 2012
Laytec has reported EpiCurve TT results obtained during the growth of gallium nitride HEMTs on Si(001) substrates
Thursday 13th December 2012
The firm's copper indium diselenide microsolar-scale panels are suited to many applications. These include mobile consumer electronics, parking meters, remote industrial sensors, rural water filtration and purification systems
Thursday 13th December 2012
Solar module production costs will fall to as low as $0.48/W in 2017. Although CIGS modules will drop the most, nearly matching crystalline silicon, cadmium telluride will remain the low-cost leader
Thursday 13th December 2012
The facility where the cells were grown will also be used to improve the solar cell efficiency of new and emerging CZTS absorber thin film photovoltaic materials
Wednesday 12th December 2012
The mercury cadmium telluride (MCT) detector manufacturer has secured a high value contract which covers new innovations for longer-life infrared detectors
Wednesday 12th December 2012
The XLamp XM-L2 LEDs, based on the firm's SiC (silicon carbide) technology, deliver 186 lumens-per-Watt
Wednesday 12th December 2012
The employees of the CIGS manufacturer mostly affected are dedicated to Global Solar's roofing product line
Monday 10th December 2012
The cell which reuses gallium arsenide is 20 percent efficient and is ultra-lightweight and flexible and has a potential of $0.45 per watt
Monday 10th December 2012
There are two variations available, and have been designed to enable tight linear high power UV LED arrays
Monday 10th December 2012
According to ABI Research, despite the downturn in 2012, the RF market in the foreseeable future in the Asia-Pacific region, particularly China, will remain the most important region
Monday 10th December 2012
The displays will incorporate Sharp's IGZO (Indium Gallium Zinc Oxide) technology and be built utilising existing LCD manufacturing infrastructure, and Qualcomm’s equity investment in Sharp.
Friday 7th December 2012
The indium gallium arsenide (InGaAs) triple junction based device has three photo-absorption layers which are stacked together
Friday 7th December 2012
The indium phosphide platform based on PIC technology features 500 gigabit per second (Gb/s) long haul super-channels on its nationwide fibre optic al network
Thursday 6th December 2012
Dynax Semiconductor is to receive its first Aixtron production system to manufacture gallium nitride on silicon carbide (SiC) and silicon substrates
Thursday 6th December 2012
The deal with Solar Junction, which produces 44 percent efficiency III-V wafers, should position IQE to become one of the key epiwafer suppliers to the CPV market
Thursday 6th December 2012
The III-V gallium arsenide (GaAs) based monolithic platform could change the roadmap for smartphones, tablet and wearable computers