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Industry News

Tuesday 24th June 2008
A superluminescent LED has for the first time been engineered to exhibit high output power as well as a broadband emission spectrum.
Tuesday 24th June 2008
The 2008 MTT-S International Microwave Symposium in Atlanta unveils thriving competition between who has the best GaN devices, and who has the best gadgets at their booth.
Friday 20th June 2008
Two of the biggest III-V companies are responding to the needs of the defense industry to push the power and frequency of RF transistors - and look set to move to GaN production on 4-inch wafers in doing so.
Friday 20th June 2008
The latest 0.18 micron SiGe foundry capability offers improved integration and efficiency as the company looks forward to its future under Tower Semiconductor's ownership.
Thursday 19th June 2008
The latest GaAs chips for wireless infrastructure from the European foundry use its PHEMT process to combine high linearity and low noise figures.
Wednesday 18th June 2008
The Japanese company hopes high-power devices, such as the market-leading HEMT that it's bringing into production, will enable it to succeed in a tight RF GaN market.
Tuesday 17th June 2008
It's good news and bad news for the photonic integrated circuit manufacturer, as it scores a major deal with Deutsche Telekom, but lowers sales guidance for the back end of 2008.
Tuesday 17th June 2008
Semiconductor equipment vendor Tegal Corporation says that its strong finances put it in a position to take advantage of weakened competitors who are feeling the strain.
Monday 16th June 2008
As Cree launches a GaN MMIC foundry service, Yole Developpement predicts that this week's MTT-S show will see the release of new wide-bandgap devices and deployment by systems integrators.
Friday 13th June 2008
Despite recovering well from a weak start to its fiscal year, the fiber-optic component maker disappoints some with its 2009 guidance.
Thursday 12th June 2008
Perfect annealing conditions hold the key to fabricating room-temperature single-mode GaInNAs lasers operating at 1.5 microns.
Monday 9th June 2008
Better control of crystal quality is "strictly necessary" to improve blue laser diode reliability, finds an extensive study by laser manufacturer Panasonic and a team at the University of Padova.
Friday 6th June 2008
The GaAs chip manufacturer's share price is booming, thanks in part to its recent acquisition of Freescale's power amplifier business.
Friday 6th June 2008
Best-ever system efficiency figures bode well for Concentrix Solar’s larger upcoming solar power plant deployments and factory opening.
Thursday 5th June 2008
Using a closely lattice-matched buffer, Chinese researchers have demonstrated HVPE growth of non-polar GaN epilayers on economical substrates.
Wednesday 4th June 2008
The issues surrounding the impending deployment of the LTE standard in the analog TV spectrum will demand high-performance GaAs PAs, say both Avago and Strategy Analytics.
Tuesday 3rd June 2008
Strategy Analytics says TriQuint made up ground on RFMD and Skyworks last year, while the effects of a recent dip in handset shipments in Europe and Japan are likely to hit suppliers equally.
Tuesday 3rd June 2008
Aixtron's 300 mm wafer reactor and new substrates from silicon specialist MEMC Electronic Materials yield high-quality AlGaN/GaN.
Monday 2nd June 2008
The chemical company is helping high-volume LED manufacturers automate the flow of reagents into their deposition tools.
Friday 30th May 2008
British firm CIP is playing a central role in a pan-European effort to combine high-functionality monolithic InP chips with hybrid silica-on-silicon integration for future optical communications.
Thursday 29th May 2008
The Silian Group is basing billion-dollar LED manufacturing plans on an acquisition that will see it control a key part of the sapphire substrate supply.
Thursday 29th May 2008
From August, the Japanese firm's lighting subsidiary will mass produce a range of LED lamps that are nearly as bright as 100W incandescent bulbs.
Wednesday 28th May 2008
Combining a MOSFET with a HEMT and adding a state-of-the-art gate electrode makes for a MOS-HEMT that ticks most of the performance boxes for GaN power electronics.
Tuesday 27th May 2008
A series of new reports conclude that the market for femtocells – tiny base stations that provide broadband cellular connectivity in the home or office – is set to boom.