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Industry News



Thursday 10th January 2013
The company hopes to meet the growing demands of III-V semiconductor companies by offering its growth, fabrication, testing and production facilities
Thursday 10th January 2013
The acquisition will increase IQE's wireless market share substantially with Kopin Wireless' major customers Skyworks, AWSC, RFMD and TriQuint
Wednesday 9th January 2013
Firms in the LED and equipment market are still facing rapidly declining prices and waning demand and are finding it difficult to increase revenue and income. However, it's not all bad news - product development remains a bright spot
Wednesday 9th January 2013
Using First Solar's CdTe (cadmium telluride) modules, the investment is aimed at advancing PV power plant projects in a sustainable market
Tuesday 8th January 2013
The firm's cadmium free copper indium selenide cell was cut from a 30cm x 30cm substrate, demonstrating the high possibility for further increases
Monday 7th January 2013
The program targets conversion efficiency gains beyond First Solar's cadmium telluride roadmap
Wednesday 2nd January 2013
The partnership between the two firms will result in lower costs and increased equipment productivity in the competitive nitride LED market
Friday 28th December 2012
Maybe in the LED market. But opportunities for power amplifiers and tuneable capacitors and competing technologies may bring new volume applications to sapphire wafer manufacturers
Monday 24th December 2012
High purity MOF products prepared by the liquid-free process may be ideally suited as rare earth containing materials for sensors and detectors, electronic or magnetic materials
Friday 21st December 2012
The centre will use the tool to remove oxygen, moisture and carbon contamination to ensure a stable process regardless of source gas quality or flow rate in gallium nitride products
Friday 21st December 2012
A new consortium has been set up to develop III-V diode-laser mini-bars for industrial applications
Wednesday 19th December 2012
The firm's XLamp MK-R LEDs grown on silicon carbide deliver record-breaking efficacy and next-generation price-performance for LED arrays
Tuesday 18th December 2012
The analyst group are releasing a detailed report on the most likely 2013 scenario
Monday 17th December 2012
The price of gases used in III-V MOCVD growth will be increased by between 15 and 30 percent in the US, Canada and Puerto Rico
Monday 17th December 2012
Scientists have demonstrated a 50 percent improvement of the dielectric breakdown field in silicon carbide MOSFETS
Friday 14th December 2012
The market will peak at $13.5 billion in 2015 but will remain relatively flat after that. This is mainly due to fewer LED replacements being required each year due to longer lifetimes
Friday 14th December 2012
The three year project announced by imec, will combine III-V high speed VCSELs with various silicon components to allow new functionalities such as wavelength multiplexing
Friday 14th December 2012
The ARPA-E project will concentrate on using aluminium nitride technology to more efficiently control the flow of electricity across high-voltage electrical lines
Friday 14th December 2012
Laytec has reported EpiCurve TT results obtained during the growth of gallium nitride HEMTs on Si(001) substrates
Thursday 13th December 2012
The firm's copper indium diselenide microsolar-scale panels are suited to many applications. These include mobile consumer electronics, parking meters, remote industrial sensors, rural water filtration and purification systems
Thursday 13th December 2012
Solar module production costs will fall to as low as $0.48/W in 2017. Although CIGS modules will drop the most, nearly matching crystalline silicon, cadmium telluride will remain the low-cost leader
Thursday 13th December 2012
The facility where the cells were grown will also be used to improve the solar cell efficiency of new and emerging CZTS absorber thin film photovoltaic materials
Wednesday 12th December 2012
The mercury cadmium telluride (MCT) detector manufacturer has secured a high value contract which covers new innovations for longer-life infrared detectors
Wednesday 12th December 2012
The XLamp XM-L2 LEDs, based on the firm's SiC (silicon carbide) technology, deliver 186 lumens-per-Watt