Kyma Technologies, Inc., a supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, is pleased to announce that Kyma has acquired from The Fox Group certain assets and intellectual property rights.
Fujitsu Limited and Fujitsu Laboratories Ltd. have announced the development of a power amplifier using gallium nitride (GaN)(1) High Electron Mobility Transistors (HEMT)(2) that has achieved the world's highest output performance of 1.3W for wireless communications in the millimeter-wave W-band(3), for which widespread usage is expected in the future.
Lund (Sweden) based nanowire semiconductor LED developer GLO AB today announced the closing of an SEK 170 million investment round (approximately USD 25 million) and establishment of a California-based engineering center to supplement its current efforts in Sweden and Denmark. The Company also announced appointment of Fariba Danesh as its Chief Executive Officer.
Compound Semiconductor Technologies Global announces that it has completed the qualification of its Hamilton wafer fabrication plant, following the acquisition of the facility from Intense Ltd in January 2010.
The investment package will fund production development of its flexible thin film NanoBud components to supply display, touch, photovoltaic, tracking and haptic customers in the optics, energy and electronics sectors.
Solyndra says the 247,000 square feet installation which was completed in 8 weeks will be its largest in the United States. At peak production, the plant's electricity will be reduced from outside sources by 25% and CO2 emissions will be reduced by 1,000 metric tons per year.
The acquisition of Galaxy for upto $14.15m in cash will expand IQE’s Antimonide portfolio. This sees IQE intending to place 65 million shares to raise £20.8 million gross for the purchase, and for capacity expansion and strengthening of the balance sheet.
The Consortium will provide ongoing national organizational structure and guidance in the process of evaluating solid-state street lighting technologies meant for public streets and other public areas.
Nanomarkets’ latest report, “Zinc Oxide Markets, 2010 and Beyond” says that by 2015, the largest single segment of the Zinc Oxide electronics market will be Zinc Oxide LEDs. ZnO offers several advantages such as low cost compared with more traditional LED materials such as GaN and GaAs.
The agreement is with the Advanced Research Projects Agency – Energy (ARPA-E). The devices are expected to be key enablers for integrating large-scale wind and solar power plants into the next-generation Smart Grid.