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Industry News


Wednesday 19th June 2013
The firm's concentrator triple-junction compound solar cell enables the efficient conversion of sunlight into electricity with a stack of three photo-absorption layers, the bottom most of which is made from indium gallium arsenide
Tuesday 18th June 2013
The firm's indium phosphide (InP) devices have shown that reliability is critical as operators leverage PICs for cost-effective super-channel solutions to scale Intelligent Transport Networks
Friday 14th June 2013
The firm is setting the standard with a breadth of offerings in III-nitride UV LEDs for industrial and specialty applications
Friday 14th June 2013
The firm believes its Monolithic Microwave Integrated Circuit (MMIC) gallium arsenide based Integrated Circuits push the boundaries of robust GaAs technology
Friday 14th June 2013
The firm has been awarded for its affordable and effective gallium nitride RF based technology
Thursday 13th June 2013
Osram Opto's pilot project
Thursday 13th June 2013
After being awarded at the CS awards for this tool the firm has been once again been recognised for its cost efficient MOCVD AIX G5+ reactor used for gallium nitride-on-silicon development
Thursday 13th June 2013
Khaled Juffali company has announced a 1 MW project with the world’s largest oil producer. It aims to test CPV technology for future utility-scale installatins and lay solid groundwork for new solar projects in Saudi Arabia
Monday 10th June 2013
From April 2012 to late March 2013, roughly 350 patent applicants related to AlGaN, InGaN and GaN were filed. These were by organisations based in Japan, Korea, USA and China
Friday 7th June 2013
The US Department of Energy has invested in five companies to drive cost-competitive next generation efficient LED lighting
Friday 7th June 2013
The institute will present its latest results on 930 - 970nm GaAs (gallium arsenide) based pump laser sources at CLEO 2013
Thursday 6th June 2013
The firm's cadmium telluride (CdTe) modules will be deployed in the 50MW plant. The project will create 300 jobs during the construction period
Thursday 6th June 2013
Yole Développement analysis have charted the obstacles facing adoption of durable sapphire screen covers, showing that immediate use in a new iPhone would be too great a strain on the supply chain
Thursday 6th June 2013
The company’s latest silicon-germanium chip-making process enables data to flow through network backbones in applications such as Wi-Fi, LTE cellular, wireless backhaul and high speed optical communications
Wednesday 5th June 2013
The aim of a joint project is to enable highly mismatched combinations such as GaAs-on-silicon, GaAs-on-InP, InP-on-germanium and GaAs-on-gallium antimonide
Wednesday 5th June 2013
The firm's new breakthrough technology delivers contractors quick Retrofit to LED lighting
Wednesday 5th June 2013
Qualcomm has developed a CMOS power amplifier (PA) which is intended to knockoff whitebox mobile phone vendors
Tuesday 4th June 2013
The company says gallium nitride HEMT prices have greatly improved and are now a viable alternative to silicon LDMOS transistors for cellular telecom amplifiers
Tuesday 4th June 2013
The silicon germanium device is designed for mobile communications and radar imaging applications. The solution is claimed to seamlessly bring together 4 integrated chips and 64 antennas in a single package
Tuesday 4th June 2013
The Molecular Beam Epitaxy (MBE) system used in GaAs wafer production was the most damaged and required a virtual rebuild although it has now been refitted
Tuesday 4th June 2013
The gallium nitride device integrates multiple chips within a single unit to enable more compact radars and wireless communications equipment
Tuesday 4th June 2013
The company has expanded its gallium nitride on silicon carbide portfolio of devices for the L-band avionics market
Tuesday 4th June 2013
Infinera's indium phosphide (InP) based PICs have been activated on the GEANT production network from Amsterdam to Frankfurt
Thursday 30th May 2013
A new initiative is supporting research, development and innovation and improvement in the entire semiconductor ecosystem