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Industry News


Wednesday 15th February 2012
The market for gallium arsenide-based PAs will continue to grow in more demanding applications and more sophisticated smartphones
Wednesday 15th February 2012
The firm's next-generation LED module family supports 230 V input
Wednesday 15th February 2012
A new Thermal Infrared Sensor (TIRS), which incorporates gallium arsenide chips, will take the Earth's temperature with a new technology that applies quantum physics to detect heat
Monday 13th February 2012
The developer of high efficiency III-V multi-junction cells has closed a Series D financial round from current investors with an additional strategic investment and partnership from IQE
Friday 10th February 2012
The firm hopes its chips, some of which incorporate indium gallium nitride layers, to advance UV LED technology for the curing industry and provide cost-effective solutions
Friday 10th February 2012
The indium gallium nitride LED chip, developed with Verticle's patented copper substrate and chemical chip separation technology, is optimised for light extraction efficiency
Friday 10th February 2012
The plant will use Soitec’s Concentrix fifth-generation III-V multi-junction CPV systems
Friday 10th February 2012
The firm will to supply 500,000 TIE (2-inch equivalent) of 6-inch diameter c-plane sapphire cores, which will be used to produce high quality sapphire substrates for the HB-LED industry
Friday 10th February 2012
The new agreement is with the firm's largest customer for large-diameter (classed as 6- and 8-inch) wafers
Thursday 9th February 2012
After a banner year in 2010 and a fast start to 2011, GaAs device revenue growth slowed, maintaining a historical average of six percent
Thursday 9th February 2012
A new agreement with MSFL , one of China’s main non-banking financial institutions, will enable Aixtron to promote the leasing of its MOCVD equipment to customers across China
Thursday 9th February 2012
The French firm has been assessed the global number one for supplying the military with cooled MCT infrared detectors, critical scanning and staring arrays
Wednesday 8th February 2012
The new tool also optimises footprint in the fab and is claimed to deliver 55 percent higher wafer output for every square metre of cleanroom space compared to competitive offerings
Wednesday 8th February 2012
The company has recently qualified the TurboDisc K465i GaN MOCVD System for high-volume production of high brightness LEDs at its state-of-the-art manufacturing facility in Taiwan
Wednesday 8th February 2012
Cree's new silicon carbide device platform is claimed to deliver twice the lumens-per-dollar of other LEDs and feature the highest performance and efficacy in the industry
Tuesday 7th February 2012
Transphorm's 600 V DC-DC boost converter diodes which use its patented EZ-GaN technology are ultra-efficient, compact and easy-to-embed, and cut energy loss by 20 percent
Tuesday 7th February 2012
Taiwan headquartered Epistar will use the Turbodisc K465i GaN MOCVD reactor to grow LEDs. South Korea's LG Siltron will use the same tool to grow LEDs as well as power devices
Tuesday 7th February 2012
The global market for power supplies used in LED lighting is forecast to reach a monumental $10 billion in 2016
Tuesday 7th February 2012
Despite generally positive results and continuing development activities in the optoelectronics industry, the LED market slowed down towards the end of 2011
Monday 6th February 2012
Verified by NREL the, gallium arsenide solar cell technology moves closer to solar power without subsidies
Monday 6th February 2012
The manufacturer of thin-film cadmium telluride solar cells says its module represents a 12.2 percent aperture efficiency and is being verified by the U.S. Department of Energy's NREL
Monday 6th February 2012
The behaviour-based model enables power electronic design engineers to quantify the benefits of silicon carbide MOSFETs in board-level circuit simulation
Monday 6th February 2012
A new technique for manufacturing gallium nitride LEDs on silicon is to be exploited in the UK, putting mass-produced, energy-efficient lighting within reach
Friday 3rd February 2012
The X10 module delivers up to 50000 lumens from one component