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Industry News



Tuesday 27th November 2012
This new app for iPhones, iPads and Android Phones and Tablets allows you to keep bang-up-to-date with the CS industry while on the move
Tuesday 27th November 2012
Combining aluminium gallium arsenide (AlGaAs) with a silicon device reaps the benefits of both technologies
Monday 26th November 2012
The firm says its new process enables more robust, high-efficiency gallium nitride (GaN) RF devices
Monday 26th November 2012
The agreement is to generate cash and strengthen the firm's existing relationship with II-VI and Photop Technologies
Friday 23rd November 2012
The firm aims to expand its CIGSSe thin film module manufacturing in California and Mississippi
Thursday 22nd November 2012
CS International are pleased to announce Vijit Sabnis, Vice President Technology at Solar Junction has been confirmed as a guest speaker for the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013. His presentation will be on PV Chip Development.
Thursday 22nd November 2012
The firm's nitride MJT series enables lighting manufacturers to deliver fixture level performance up to 100 lumens per watt. Also, the MJT series is designed on widely used 5630 and 3528 packages and improves compatibility with conventional dimmers
Wednesday 21st November 2012
The firm's indium phosphide (InP) based DTN platform will be used to bring together Europe's major business areas
Wednesday 21st November 2012
The patent, regarding a green method of manufacturing II-VI quantum dots, will provide precise control of both QD shape and dimension during synthesis
Wednesday 21st November 2012
The III-V solar cells will be used in the 200 kilowatt system at Edwards Air Force Base in 2013
Tuesday 20th November 2012
The 3 x 2-inch CCS tool will be used to grow nitride R&D materials for light emitting sources, solar cells and sensors
Tuesday 20th November 2012
At a quantum yield greater than 80 percent, the II-VI dots are bright enough to be utilised as novel probes into not fully understood biological systems
Thursday 15th November 2012
The firm's silicon carbide Bipolar Junction Transistors are the first in its SiC product portfolio. They are claimed to offer the lowest total power losses at high operation temperatures
Thursday 15th November 2012
The wafer bonding tool should advance silicon carbide, gallium nitride and/or other CS technologies at Texas State University. The multifunctional tool can also be used for silicon based power devices
Thursday 15th November 2012
The firm's latest silicon carbide devices are optimised for high power, high voltage industrial applications
Wednesday 14th November 2012
By 2020, it is forecast that LED lamps will make up 66 percent of the LED chip market, which will be shrinking
Wednesday 14th November 2012
The companys' combined reference design incorporates Avago modules utilising the firm’s gallium arsenide (GaAs) based 850nm VCSEL and PIN array technologies
Wednesday 14th November 2012
This new app for iPhones, iPads and iPods allows you to keep bang-up-to-date with the CS industry while on the move
Wednesday 14th November 2012
Light bleeding and overshadowing often encountered in nitride LEDs, can be resolved by using the new domed architecture
Tuesday 13th November 2012
The Taiwanese company is expanding its MOCVD manufacturing capacity to grow gallium arsenide based lasers
Tuesday 13th November 2012
The firm's five new 3-in-1 full colour nitride LEDs and lamps for indoor, semi-outdoor and outdoor applications, combine performance with efficiency
Tuesday 13th November 2012
The strained quantum well indium phosphide design is ideally suited for moisture detection
Monday 12th November 2012
The firm's new "Instant Bandwidth" software enables Infinera's indium phosphide on DTN-X platform
Monday 12th November 2012
The firm's ELITE system comprises a laser marker, full IR lens options, double-sided probing and high voltage power analysis capability for silicon carbide device inspection