According to TrendForce’s “2011-2015 European LED Lighting Market Report” by the LED research division LEDinside, European LED lighting market’s rapid growth is attributed to the energy-saving awareness and high electricity prices in Europe, especially the latter.
A*STAR Institute of Microelectronics and NXP Semiconductors have entered into research collaboration to develop a 200mm gallium nitride-on-silicon process and technology for high voltage power devices to deliver highly efficient energy solutions in end applications such as computing and communications, aerospace and automotive applications.
Kyma Technologies, a supplier of crystalline aluminum nitride and gallium nitride materials and related products and services, has announced the successful demonstration of a 10-inch diameter aluminum nitride on sapphire template.
The new production site of EpiGaN officially opened today in the presence of Flemish Minister Mrs Ingrid Lieten and Limburg Governor Mr Herman Reynders. The company selected the Research Campus Hasselt as the ideal location for the volume production of their gallium nitrid- on-silicon epitaxial material.
These indium phosphide chips should enable transceiver manufacturers to address short and intermediate reach, long-wavelength data communications applications more cost-effectively and efficiently than ever before