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Industry News


Thursday 28th March 2013
The company is providing tactile and visual indicators for sapphire wafer orientation
Thursday 28th March 2013
The firm says its silicon carbide based devices offer compactness and superior light distribution
Wednesday 27th March 2013
The U.S. Export-Import Bank has provided project financing to support MiaSolé California exports
Wednesday 27th March 2013
Costs or efficiency - can there be a middle ground
Tuesday 26th March 2013
The silicon carbide modules will be incorporated in type 1000 railcars of the Tokyo Metro Ginza Line
Tuesday 26th March 2013
With its extended family of integrated III-nitride LED devices, the firm claims its CXA LEDs deliver the industry’s highest efficacy lighting-class arrays
Friday 22nd March 2013
The copper indium gallium diselenide modules are targeted at the defence and commercial industry
Friday 22nd March 2013
CThe company's UVC LEDs help to realise ever more increasing range of customer applications including scientific instrumentation and water disinfection
Friday 22nd March 2013
The solar energy project in Shilin Town in China's south western province Yunnan is currently the largest CIGS module solar park feeding power into the Chinese grid
Thursday 21st March 2013
The supplier of crystalline aluminium and gallium nitride materials found that there is no noticeable degradation in the on resistance of its KO-Switch after 1 million device operations
Thursday 21st March 2013
A NIST investigation has reported that almost 90 percent of green and about 44 percent of red pointers were out of compliance with federal safety regulations
Wednesday 20th March 2013
Equipped for wafer bow control, Laytec's latest EpiTT system incorporates a blue laser and triple wavelength reflectance for the precise monitoring of AlN interlayers, AlGaN buffer layers and multiple quantum wells
Wednesday 20th March 2013
Gallium arsenide device revenues have grown Y-o-Y in 2012 and although Skyworks and WIN Semiconductors are at the forefront, the silicon threat looms. This market has seen recent developments such as CMOS multi-mode, multi-band PAs and envelope tracking
Wednesday 20th March 2013
The manufacturer of III-V multi-junction solar cells used a Veeco MBE system to achieve critical milestones in developing a production-ready commercial cell
Wednesday 20th March 2013
Japanese firm Rohm has reduced power loss in its new silicon carbide device, making it ideal for 1200V/180A inverters
Tuesday 19th March 2013
The company expects to phase out manufacturing in its Newton Aycliffe, UK-based GaAs pHEMT facility and transition most GaAs manufacturing to its GaAs HBT manufacturing facility in North Carolina
Monday 18th March 2013
The EML-TOSA device will help to downsize facilities and expand high-speed 40Gbps optical transmission networks
Friday 15th March 2013
Platform enables cost-effective R&D of silicon photonic ICs for high-performance optical transceivers
Friday 15th March 2013
The firm believes this is a major milestone for GaN power electronics as JEDEC qualification of gallium nitride-on-silicon. It will enable mass adoption price points for devices providing dramatically improved power efficiency
Thursday 14th March 2013
The joint effort will enhance manufacturing and market analysis, key requirements for sustainable deployment of solar PV energy
Thursday 14th March 2013
Foundry Global Communication Semiconductors will provide the Canadian based firm with a complete range of indium phosphide wafer processing services. OneChip will also use IQE's epitaxial growth services to produce its InP PICs for the data centre interconnect and passive optical network markets
Wednesday 13th March 2013
The firm's fully integrated indium phosphide devices prevent the complicated steps required by CMOS silicon and VCSEL processess
Tuesday 12th March 2013
The AIX G5+ system will be used to grow gallium nitride on silicon for power supplies, PV inverters/power conditioners, motor drives, and electric vehicles