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Industry News


Tuesday 20th November 2012
The 3 x 2-inch CCS tool will be used to grow nitride R&D materials for light emitting sources, solar cells and sensors
Tuesday 20th November 2012
At a quantum yield greater than 80 percent, the II-VI dots are bright enough to be utilised as novel probes into not fully understood biological systems
Thursday 15th November 2012
The firm's silicon carbide Bipolar Junction Transistors are the first in its SiC product portfolio. They are claimed to offer the lowest total power losses at high operation temperatures
Thursday 15th November 2012
The wafer bonding tool should advance silicon carbide, gallium nitride and/or other CS technologies at Texas State University. The multifunctional tool can also be used for silicon based power devices
Thursday 15th November 2012
The firm's latest silicon carbide devices are optimised for high power, high voltage industrial applications
Wednesday 14th November 2012
By 2020, it is forecast that LED lamps will make up 66 percent of the LED chip market, which will be shrinking
Wednesday 14th November 2012
The companys' combined reference design incorporates Avago modules utilising the firm’s gallium arsenide (GaAs) based 850nm VCSEL and PIN array technologies
Wednesday 14th November 2012
This new app for iPhones, iPads and iPods allows you to keep bang-up-to-date with the CS industry while on the move
Wednesday 14th November 2012
Light bleeding and overshadowing often encountered in nitride LEDs, can be resolved by using the new domed architecture
Tuesday 13th November 2012
The Taiwanese company is expanding its MOCVD manufacturing capacity to grow gallium arsenide based lasers
Tuesday 13th November 2012
The firm's five new 3-in-1 full colour nitride LEDs and lamps for indoor, semi-outdoor and outdoor applications, combine performance with efficiency
Tuesday 13th November 2012
The strained quantum well indium phosphide design is ideally suited for moisture detection
Monday 12th November 2012
The firm's new "Instant Bandwidth" software enables Infinera's indium phosphide on DTN-X platform
Monday 12th November 2012
The firm's ELITE system comprises a laser marker, full IR lens options, double-sided probing and high voltage power analysis capability for silicon carbide device inspection
Monday 12th November 2012
The company says it is introducing industry’s first fully qualified, production-ready all-silicon carbide power module
Friday 9th November 2012
The Japanese firm is branching out into gallium nitride on silicon to serve servers
Friday 9th November 2012
Anadigics has shipped production volumes of single-band and dual-band indium gallium phosphide based PAs in the United States and Asia
Wednesday 7th November 2012
Using gallium nitride as a substrate reduces defect density. Wafers are currently available in 2 inch but the firm is aspiring to provide 6 inch GaN wafers
Tuesday 6th November 2012
The company has signed a power purchase agreement covering its soon to be built 44 MWp Touwsrivier power plant
Tuesday 6th November 2012
Lux Research says that GaN substrates can displace cheaper silicon by offering 360 percent to 380 percent better performance
Monday 5th November 2012
Under the terms of the agreement, RFMD will acquire Amalfi with cash on hand for total consideration of approximately $47.5 million, net of cash received
Monday 5th November 2012
CS International are pleased to announce Rainer Krause, Director Smart Cell Incubator Unit -Soitec has been confirmed as a guest speaker for the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013. His presentation will be on PV Chip Development.
Thursday 1st November 2012
Infinera's indium phosphide PICs will be used for the island's 100G mediterranean subsea network
Thursday 1st November 2012
Total cumulative photovoltaic installations in Southeast Asia are forecast to reach almost 5GW by 2016