Info
Info
search:

< Page of 13999 >

Industry News


Monday 4th August 2014
Slower growth in 2015 and a new round of price wars predicted
Friday 1st August 2014
Method could be used for low cost, high volume manufacturing
Friday 1st August 2014
Includes patents of 15 major companies 
Tuesday 29th July 2014
Design aims to improve control for plural enhanced or depletion mode transistors 
Monday 28th July 2014
17 percent of headlamps to use LEDs in 2019
Monday 28th July 2014
€700 million earmarked for photonics 
Friday 25th July 2014
First nitride-based red LED with the light output exceeding 1mW at 20 mA
Thursday 24th July 2014
Device  could be future optical replacement for on-chip wires
Thursday 24th July 2014
Research takes another step towards future multifunctional nanoelectronic devices
Tuesday 22nd July 2014
Dots act as luminescent downshifters
Monday 21st July 2014
Report predicts challenging times for substrate makers
Monday 21st July 2014
Tiny plasmon-based sensor detects minute traces of explosives in the air
Friday 18th July 2014
Research opens the door to quantum dot architectures completely free of uncontrolled variations
Wednesday 16th July 2014
Active LTE connections to exceed 1 billion in 2017, forecasts Juniper Research 
Tuesday 15th July 2014
36.7 percent efficiency for module using highly efficient multi-junction solar cells
Friday 11th July 2014
Capacity to grow from 1.6GW this year to 7.1GW in 2019
Thursday 10th July 2014
Phase-change film 'sandwich' shows potential for thin, flexible nano-pixel displays
Thursday 10th July 2014
New report forecasts rising use of quantum dot displays for smartphones and tablet PCs
Wednesday 9th July 2014
Study demonstrates possibility of using GaN layers to make flexible transparent substrates
Wednesday 9th July 2014
Report estimates a CAGR of 33.1 percent from 2013 through 2018
Monday 7th July 2014
11.8 percent price drop in June 2014 from year earlier
Monday 7th July 2014
Acquisition marks strategic move into advanced packaging and MEMS markets
Friday 4th July 2014
Higher light extraction efficiency results from a novel architecture formed by laser drilling and photochemical etching
Friday 4th July 2014
In-situ annealing nearly doubles electron mobility in InGaAs MISFETs