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Industry News


Tuesday 15th October 2013
The new transformer-free GaN on GaN based LED lamps surpass halogen performance and capability
Tuesday 15th October 2013
The firm's latest silicon carbide diode products can be used in aerospace, welding, battery charging and other high-power industrial applications
Monday 14th October 2013
Market research firm CIR sees the total chip-level optical interconnect market surpassing $1 billion in revenue in 2021
Monday 14th October 2013
The market for LEDs grown on sapphire is set to nearly triple
Friday 11th October 2013
Suited to Industrial-scale coating of 4” III-V and III-nitride wafers, the company is providing the option for continuous deposition on reel-to-reel
Friday 11th October 2013
The gallium nitride based laser will enable deployment to microfabrication, where demand is increasing with the miniaturisation of smartphones and other electronic devices
Friday 11th October 2013
Packaged LED revenue in the residential sector is forecast to grow to nearly $2.7 billion in 2016, up from an estimated $850 million in 2013
Thursday 10th October 2013
The first installation of its kind in the country is part of the Sunidarity initiative, launched by Soitec to help humanitarian projects benefit from autonomous solar energy generation
Tuesday 8th October 2013
The partners’ combined strengths in aerospace and defence research and industrial know-how will facilitate the paradigm shift needed for innovation in disruptive technology in thermal imaging
Monday 7th October 2013
The GENxplor system will be used to grow III-V lasers, photo detectors, and solar cells
Monday 7th October 2013
The firm's silicon carbide epitaxial wafers will contribute to the commercialisation of next-generation inverters for the power device market
Friday 4th October 2013
The analysts forecast the Global Gallium and Arsenic (GaAs) Device market to grow at a CAGR of 3.1 percent over the period 2012-2016. One of the key factors contributing to this market growth is the increasing global adoption of smartphones. The Global GaAs Device market has also been witnessing an increasing number of collaborations among GaAs device manufacturers. However, increasing threat from alternate technologies could pose a challenge to the growth of this market.
Thursday 3rd October 2013
At less than $10 for a 60W dimmable light bulb, Walmart and GE are bringing LED technology to the masses
Thursday 3rd October 2013
Anadigics’ indium gallium phosphide (InGaP) technology is utilised in the 802.11ac WiFi Front-End IC, ProEficient power amplifier, and HELP4 power amplifier
Thursday 3rd October 2013
The firm's latest gallium nitride based optical and base station modules enhance RF amplifiers
Wednesday 2nd October 2013
Working with Rice University, a new funded program will leverage Daylight Solutions’ innovative imaging technology, and apply it to new methods for detecting cancer
Wednesday 2nd October 2013
The roadmap to even higher efficiencies has also been revealed with an R&D demonstration module exhibiting 37.1 percent efficiency
Wednesday 2nd October 2013
The joint development of a PVB film for photovoltaic module encapsulation with AIST has led to superior long-lasting durability and a frameless, thinner design
Wednesday 2nd October 2013
The firm's bulb based on III-nitride chip technology has receives ENERGY STAR qualification and is now even more affordable thanks to utility rebates
Wednesday 2nd October 2013
The firm's silicon carbide (SiC) based enhanced SC³ technology platform drives performance up and system cost down
Wednesday 2nd October 2013
The market research firm says 2012 gallium arsenide device revenues hit $5.3 billion with additional growth anticipated in the immediate future. On the down side, a weak demand for MBE, and particularly MOCVD grown GaAs epitaxial substrates will adversely affect the device market in the longer term
Tuesday 1st October 2013
The firm's gallium arsenide (GaAs) based 850 nm infrared Dragon Dome LEDs will have a usable range of more than 100 metres, depending on the sensitivity and field of view of the camera
Tuesday 1st October 2013
The firm's source system features integrated heating and control useful in LED and solar cell growth
Tuesday 1st October 2013
The baSiC-T tool is suited for the growth of silicon carbide for high-performance electronics