Nitride Solutions is developing a manufacturing technology that hopes to deliver high-volume, low-cost aluminium nitride substrates with defect rates 10 times lower than substrates currently on the market.
The organisations will jointly develop technology for next-generation gallium nitride power semiconductors and LEDs on 200 mm diameter silicon substrates. They aim to enhance properties and reduced production costs.
The company is expanding total capacity by 5,000 tonnes per year in Japan, Taiwan and China to cope with demand for ammonia gas, which is used in many electronic applications including gallium nitride LEDs.
Scientists will measure the performance, reliability and thermal stability of different types of solar cells, including CIGS and use electroluminescence, photoluminescence and thermography in characterisation.
The new high-efficiency PA modules based on gallium indium phosphide / gallium arsenide HBT technology are ideal for embedded WLAN applications requiring small size, high efficiency and low battery-voltage operation.
The firm’s new low noise amplifiers provide flexible, highly-efficient linear solutions for mobile network base stations, repeaters, point-to-point radios, test and other high-performance applications.
The new TMGa production plant, to be completed in 2012, will be three times the size of the existing unit. The second facility for TMIn manufacture will increase capacity by 400 % and should be completed by Dec 2011.
Using indium gallium nitride on a silicon substrate, novel etching, layout and thermal management strategies, researchers have produced much smaller and lower temperature LEDs than current LEDs using the same electrical power.
Since its purchase of 6 CRIUS 31x2-inch reactors last November, AquaLite is seeing a stronger demand for power chip gallium nitride based LEDs and is looking to the 55x2-inch CRIUS II to increase throughput.
The firm is looking to develop the next generation of power electronics and offer design engineers silicon carbide devices which have zero reverse recovery loss, temperature-independent switching losses and higher frequency operation.