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Industry News


Thursday 6th December 2012
Sagem will transfer to Sofradir its indium antimonide (InSb) and indium gallium arsenide (InGaAs) technology
Wednesday 5th December 2012
At 930mW the 850nm chip, from an operating current of 1A, has a light output (under lab conditions) 25 percent higher than that of many of the chips currently available
Wednesday 5th December 2012
The newly formed firm will use the reactors to manufacture III-nitride HB-LED wafers
Wednesday 5th December 2012
These devices, many based on indium phosphide (InP) and gallium arsenide (GaAs) technology, have changed the dynamics of the optical network industry
Tuesday 4th December 2012
First Solar will work with Zhenfa to deploy its cadmium telluride modules to power up the Xinjiang province
Tuesday 4th December 2012
The firm has secured a contract to produce indium phosphide wafers for lasers in telecommunications
Tuesday 4th December 2012
The ICOS WI-2280 system is designed to provide manufacturers with greater flexibility, reduced cost of ownership and improved efficiency
Monday 3rd December 2012
The indium phosphide (InP) platform based on PIC technology demo spanned Manhattan to Upton in New York
Monday 3rd December 2012
As well as increasing brightness, the firm maintains its latest technology lowers LED lighting costs considerably
Friday 30th November 2012
A multiport SiC device accommodates all the required voltages from a single, compact unit, allowing each system to be optimised for maximum efficiency
Friday 30th November 2012
Yes, according to Samsung. Rather than a gallium arsenide power amplifier, the mass produced 3G Samsung Galaxy Appeal is one of the first phones incorporating a silicon CMOS power amplifier
Thursday 29th November 2012
CS International are pleased to announce Bryan Bothwell, Strategy and Business Development Manager for TriQuint Semiconductor has been confirmed as a guest speaker for the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013. His presentation will be on Maximizing Gallium Nitride Product Solutions and Foundry Services for Advanced RF Design Success.
Wednesday 28th November 2012
The indium phosphide (InP) PIC provider and its Japanese partner says that this is a milestone for delivery of high capacity optical transmission over DSF fibre
Wednesday 28th November 2012
Skyworks, RFMD, Avago, TriQuint and Murata, to compete in this segment using GaAs, CMOS, RF MEMS and voltage-dependent dielectric variable capacitor technologies
Tuesday 27th November 2012
This new app for iPhones, iPads and Android Phones and Tablets allows you to keep bang-up-to-date with the CS industry while on the move
Tuesday 27th November 2012
Combining aluminium gallium arsenide (AlGaAs) with a silicon device reaps the benefits of both technologies
Monday 26th November 2012
The firm says its new process enables more robust, high-efficiency gallium nitride (GaN) RF devices
Monday 26th November 2012
The agreement is to generate cash and strengthen the firm's existing relationship with II-VI and Photop Technologies
Friday 23rd November 2012
The firm aims to expand its CIGSSe thin film module manufacturing in California and Mississippi
Thursday 22nd November 2012
CS International are pleased to announce Vijit Sabnis, Vice President Technology at Solar Junction has been confirmed as a guest speaker for the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013. His presentation will be on PV Chip Development.
Thursday 22nd November 2012
The firm's nitride MJT series enables lighting manufacturers to deliver fixture level performance up to 100 lumens per watt. Also, the MJT series is designed on widely used 5630 and 3528 packages and improves compatibility with conventional dimmers
Wednesday 21st November 2012
The firm's indium phosphide (InP) based DTN platform will be used to bring together Europe's major business areas
Wednesday 21st November 2012
The patent, regarding a green method of manufacturing II-VI quantum dots, will provide precise control of both QD shape and dimension during synthesis
Wednesday 21st November 2012
The III-V solar cells will be used in the 200 kilowatt system at Edwards Air Force Base in 2013