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Industry News


Friday 18th November 2011
A growing oversupply of LEDs and expiring subsidies in China have contributed to the reduction. On the upside, shipments for GaN-on-silicon reactors saw an upsurge.
Friday 18th November 2011
GCS is adding Nitronex’s 100mm gallium nitride on silicon technology to its extensive compound semiconductor capability allowing the firm access to the expanding GaN RF market.
Friday 18th November 2011
Enabling more reliable RF power, Nitronex has upgraded its 28V NRF1 gallium nitride on silicon technology.
Thursday 17th November 2011
The cadmium telluride modules made by the firm to date are capable of generating enough clean electricity to power approximately 2.5 million homes.
Thursday 17th November 2011
Very satisfied with the Aixtron CCS technology used in Phase 1 of its gallium nitride HB LED program, Hualei will continue to choose Aixtron systems for its next expansion phases.
Thursday 17th November 2011
Growth in demand for LED lighting has triggered the need for increased warehouse and manufacturing capacity.
Wednesday 16th November 2011
The talk, taking place at the CS Europe conference in March 2012, Frankfurt, will be “An Overview of the DARPA Diverse Accessible Heterogeneous Integration (DAHI) Program.”
Tuesday 15th November 2011
With the takeover to be concluded by early 2012, Manz plans to integrate the current production site, and a total of 116 Würth Solar employees, into its own Group.
Tuesday 15th November 2011
The firm’s silicon carbide power modules, featuring a compact, optimised cooling system, can operate at up to 2000C and achieve 30kW/l performance.
Tuesday 15th November 2011
Due to the growth of mobile hotspots and USB modems, the market will continue to surge according to recent research from Strategy Analytics.
Tuesday 15th November 2011
SETi’s nitride based UVLEDs are used in Psoria‐Light’s patent‐pending emitter, which enables a compact handset to deliver very high power deep UV light in the range from 300 nm to 320 nm.
Friday 11th November 2011
The HiPoSwitch € 5.6 million project, funded by the European Community and eight European project partners has been launched. The partners, including Aixtron, EpiGaN, and Infineon, aim to develop gallium nitride power transistors and make 200 mm GaN-on-silicon substrates commercially available after 3 years.
Friday 11th November 2011
Dr. John Palmour presents at the CS Europe Conference, March 2012, Frankfurt.
Thursday 10th November 2011
The transaction marks an end to the dry period of venture deals in the Ottawa region & sets the gallium nitride product manufacturer on a path to attack the $14 billion-a-year power devices market.
Thursday 10th November 2011
The firm has received an order from a wireless compound semiconductor chip manufacturer which produces gallium arsenide and silicon nitride materials.
Thursday 10th November 2011
The German laser company will acquire the complete ACE short-pulse product line of the English specialist company.
Thursday 10th November 2011
The Cardiff University spin-out which sells RF testing equipment and device measurement services to the semiconductor industry will value this new addition, who has extensive experience in the III-V industry.
Thursday 10th November 2011
European researchers have demonstrated gallium arsenide based laser devices which are four times faster than the current single channel data rate used in commercial systems.
Thursday 10th November 2011
Key applications include explosives characterisation and detection and non-destructive material inspection.
Wednesday 9th November 2011
The company’s HELP4 PA product family uses the Company’s exclusive indium gallium phosphide technology to achieve optimal efficiency across low-range and mid-range output power levels and provides one of the lowest quiescent currents in the industry.
Wednesday 9th November 2011
Airborne Media, Rock Systems and provider of fully integrated RF accelerated life-test/burn-in test systems for compound semiconductor devices, Accel-RF, are uniting to develop systems that permit smartphone users to privately listen to televisions in public venues.
Wednesday 9th November 2011
The engineering team at Gem Hsin Electronics is turning heads with its new patented innovations which use laser-precision technology to create direct paths for heated air to escape to the heat-sink.
Wednesday 9th November 2011
Osram’s power Topled is equipped with nanostack technology and has two compound semiconductor p-n junctions that are grown one on top of the other.
Tuesday 8th November 2011
The firm expects its Laos and new Korean facilities will be instrumental in allowing 5N Plus to meet increasing demand for its products in this part of the world.