Info
Info
search:

< Page of 13997 >

Industry News


Monday 1st July 2013
The company's latest product line targets growth opportunities in the silicon carbide power electronics market
Monday 1st July 2013
The firm's gallium nitride devices will be used for defence, industrial, aerospace and commercial applications
Monday 1st July 2013
The firms intend to acquire exclusive access to this indium phosphide coherent modulator technology. u2t has also acquired all of the assets of COGO Optronics GmbH
Monday 1st July 2013
The deployment of the firm's cadmium telluride (CdTe) modules will provide approximately 300 jobs in New Mexico
Saturday 29th June 2013
Grown on a 6 inch silicon substrate, these LEDs are designed for solid state lighting applications
Thursday 27th June 2013
The gallium nitride based MBE grown devices developed by researchers have a PL efficiency as high as 77 percent
Thursday 27th June 2013
The company will use the cash to further develop its gallium arsenide (GaAs) based Solink technology which is currently claimed to increase solar module efficiency by up to 25 percent
Thursday 27th June 2013
This LED has a gallium nitride substrate, triangular shaped chip, simplified epitaxial structure and an original silicon-based wafer level packaging
Thursday 27th June 2013
Revenue related to gallium nitride microelectronics is forecast to reach $334 million in 2017
Thursday 27th June 2013
Results show significant progress in developing a low-cost process technology to deposit III-Vs on top of silicon
Wednesday 26th June 2013
The new performance 70GHz silicon germanium oscilloscope series will offer improved signal fidelity to power high end test applications
Wednesday 26th June 2013
The joint technology was chosen for its outstanding thermal performance, reduced costs and simplified supplier management and assembly
Wednesday 26th June 2013
The company's III-nitride new LEDs are suited to ceramic-metal-halide lighting applications
Tuesday 25th June 2013
A new type of hermetic packaging for a GaN (gallium nitride) power amplifier will be utilised in the ESA satellite Proba-V
Tuesday 25th June 2013
The firm's InP (indium phosphide) based DTN-X platform was used to display Ethernet packet aggregation, VLAN switching, and transport of MPLS pseudo-wires with signalling of over 500G
Tuesday 25th June 2013
Devices using wide bandgap semiconductors, specifically silicon carbide and gallium nitride, will offer the greater competitive advantage in microinverters and small string inverters
Monday 24th June 2013
The copper indium sulphide modules have an efficiency of almost 15 percent - which is similar to polycrystalline silicon cells
Monday 24th June 2013
The organisation says the conversion efficiency of its InGaP/GaAs cell sets a world record for a two-junction solar cell measured under one-sun illumination
Friday 21st June 2013
Gallium arsenide MMICs have been used in the space pioneer's Mars campaign
Friday 21st June 2013
The firm's III-V multi-junction solar cells will be deployed to assess commercial geostationary telecommunications and scientific earth observation satellite missions
Friday 21st June 2013
Using CIGS technology, the companies will unite to brighten up life for families living in the dark
Friday 21st June 2013
Analyst research firm IHS believes the total LED market for AlInGaP, GaN and other LED types will beat the $10 billion revenue reached in 2010
Wednesday 19th June 2013
The firm's PlasmaPro 100 Sapphire can be used for etching III-nitride HBLED materials and is claimed to minimise cost of ownership and maximise yield
Wednesday 19th June 2013
The firm says its commercial-size modules (1.09 square metres) have set a new CIGS efficiency record 15.7 percent