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Industry News


Wednesday 15th May 2013
The high capacity makes the application suitable for use in MOCVD growth where other adsorbent materials are impractical
Monday 13th May 2013
The Cardiff headquartered firm, along with II-VI, has introduced large gallium nitride on silicon carbide substrates for power device applications
Friday 10th May 2013
Valence Process Equipment, Inc. (VPE) has announced the commercial release of the VPE GaN-500 MOCVD system, a new metal organic chemical vapor deposition (MOCVD) system for production of high-brightness light emitting diodes (LEDs). The VPE system includes a reactor that is designed around a novel (patent pending) chamber and gas-injector, resulting in the highly efficient use of pre-cursor gases. The system has a capacity of 59 two-inch wafers with a future upgrade path to 72 two-inch or 20 four-inch wafers.
Friday 10th May 2013
The organisation says that the restriction of the use of indium phosphide and gallium arsenide would have a negative impact on the semiconductor industry and Europe as a whole. SEMI has also described a new directive which will bring down patent application costs
Friday 10th May 2013
Despite an overall power electronics 2012 downturn, silicon carbide kept on growing
Wednesday 8th May 2013
Wide-bandgap transistor and diode growth potential is obscured by automotive qualification, explains Yole Développement’s Philippe Roussel, though PV inverter growth is a bright spot.
Monday 6th May 2013
SPDT switch promises increased network capacity and higher data rates
Thursday 2nd May 2013
Highly transparent, 2-inch AlN promises to enhance the performance of RF devices and deep UV lasers and LEDs.
Wednesday 1st May 2013
New product innovations in Avalanche Photodiodes offer an enhanced optical damage threshold and increased reliability
Wednesday 1st May 2013
Research and Markets has announced the addition of the
Tuesday 30th April 2013
InAs (indium arsenide), GaAs (gallium arsenide) and CdSe (cadmium selenide) will be some of the materials used to produce quantum dots in proposed solar cell research
Tuesday 30th April 2013
The gallium nitride-on-diamond technology enables high performance, low heat operation and significantly smaller transistors
Monday 29th April 2013
From 2012 to 2022 silicon carbide and gallium nitride power revenues are set to soar from $143 million to $2.8 billion
Monday 29th April 2013
The firm's multi-junction solar cell's result was verified by NREL and beats the firm's previous record of 34.2 percent
Monday 29th April 2013
The firm managed to improve efficiency by incorporating an InGaAs layer at the bottom of its InGaP / GaAs compound solar cell
Friday 26th April 2013
The French headquartered firm will talk about InGaAs, InSb, HgCdTe and MCT at SPIE DSS 2013
Friday 26th April 2013
At CS Mantech 2013, Hitachi Cable will present its gallium nitride based templates grown on sapphire
Wednesday 24th April 2013
Auger recombination could be responsible for the LED droop phenomenon
Tuesday 23rd April 2013
The firm's prototype HCPVT system uses a large parabolic dish, incorporating many mirror facets, which are attached to a sun tracking system. The tracking system positions the dish at the best angle to capture the sun's rays, which then reflect off the mirrors onto several microchannel-liquid cooled receivers with triple junction compound semiconductor chips
Tuesday 23rd April 2013
Soitec will use its triple junction compound semiconductor cells to take advantage of the region's hot temperatures
Tuesday 23rd April 2013
The LED specialist has agreed to provide Toshiba with its technology/chip licensing and manufacturing collaboration
Monday 22nd April 2013
After surpassing its own world record in October 2012 of nitride based modules of 44 percent efficiency, Solar Junction is teaming up with IQE to supply the European Space Agency
Monday 22nd April 2013
LEDs are expected to sell 16 million units in 2012 to a forecasted 33 million in 2013, and will nearly triple by 2016
Monday 22nd April 2013
EPSRC awards £600,000 for new research for solar cells