Valence Process Equipment, Inc. (VPE) has announced the commercial release of the VPE GaN-500 MOCVD system, a new metal organic chemical vapor deposition (MOCVD) system for production of high-brightness light emitting diodes (LEDs). The VPE system includes a reactor that is designed around a novel (patent pending) chamber and gas-injector, resulting in the highly efficient use of pre-cursor gases. The system has a capacity of 59 two-inch wafers with a future upgrade path to 72 two-inch or 20 four-inch wafers.
The organisation says that the restriction of the use of indium phosphide and gallium arsenide would have a negative impact on the semiconductor industry and Europe as a whole. SEMI has also described a new directive which will bring down patent application costs
The firm's prototype HCPVT system uses a large parabolic dish, incorporating many mirror facets, which are attached to a sun tracking system. The tracking system positions the dish at the best angle to capture the sun's rays, which then reflect off the mirrors onto several microchannel-liquid cooled receivers with triple junction compound semiconductor chips