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Industry News


Wednesday 10th November 2010
The firm says its new polishing slurry for C-plane sapphire substrates does not require any exceptional processes or procedures beyond what is typical to conventional colloidal silica.
Wednesday 10th November 2010
The firm sees its latest SiGe product as a solution for ever-increasing network equipment power consumption.
Tuesday 9th November 2010
Strategy Analytics predicts that the GaAs and GaN based MMIC and hybrid amplifier market is estimated to reach $178 million in 2014.
Tuesday 9th November 2010
The new facility based in Batavia responds to increasing demand for high quality, high yield large diameter sapphire wafers worldwide.
Tuesday 9th November 2010
The CIGS module supplier has secured the investment from Walsin Lihwa to construct a solar fab with 140 employees in Leipzig, Germany.
Tuesday 9th November 2010
The 120V LMR4 LED module has achieved California Title 24 registration ; this will simplify LED fixture design and speed up time to market.
Tuesday 9th November 2010
AIXTRON AG today announced a new order for a Black Magic Plasma Enhanced CVD (PECVD) system from DTU Danchip and DTU Nanotech at the Technical University of Denmark in Lyngby, Denmark.
Tuesday 9th November 2010
The firm’s cross-industry CIGSolar product is expected to advance at a tremendous rate towards the commercial market.
Tuesday 9th November 2010
The service of complaint against Harvatek was filed on November 9, 2010.
Monday 8th November 2010
The firm has reached a critical milestone towards the commercialization of PicoP display engines using direct green lasers. This is expected to offer significant commercial advantages in price, size, power, and performance over conventional frequency doubled green lasers.
Thursday 4th November 2010
The two 2 inch reactors have increased the Chinese firms HB GaN LED epiwafer capacity.
Thursday 4th November 2010
MarketsandMarkets report ‘Thin Film PV- Advanced Technologies and Global Market (2008-2015)’ says that the CIS/CIGS market is expected to grow with a maximum CAGR of 43.9% from 2010 to 2015.
Wednesday 3rd November 2010
Fast moving sector starts discussions on possible common material characteristics, automation requirements to be ready for the future.
Wednesday 3rd November 2010
The Boeing wholly owned subsidiary shipped the multi-junction gallium arsenide (GaAs) space-based solar cell solar cell just last week.
Wednesday 3rd November 2010
The Center for High Technology Materials at the university will utilize the Molecular Beam Epitxy (MBE) system in the development of next generation infrared detectors.
Wednesday 3rd November 2010
The new metalorganic precursor plant in Korea will be located in Cheonan, approximately 85 kilometers south of Seoul.
Wednesday 3rd November 2010
The firm is to expand its sensors, RF components and power management device manufacturing capability. Processes will also include a range of analogue and high performance passive components including Schottky diodes.
Wednesday 3rd November 2010
The firm says its DOW POWERHOUSE Solar Shingle is the first to obtain the Underwriters Laboratories (UL) safety mark.
Wednesday 3rd November 2010
The $2 million dollar award from the U.S. Naval Research Laboratory (NRL) will be used to create new high-performance S-band low noise amplifiers (LNAs) and high performance amplifiers (HPAs).
Wednesday 3rd November 2010
The firm says only four OSTAR Lighting Plus units are needed to replace a frosted 100 W incandescent lamp with a color rendering index of 80.
Monday 1st November 2010
Researchers from the University of North Carolina, led by Jay Narayan have integrated gallium nitride with silicon as a material for electric grids.
Monday 1st November 2010
The agreement will involve collaborating with Taiwanese industries in the semiconductor, solar energy and TFT-LCD manufacturing sectors.
Monday 1st November 2010
The firm says its flexible CIGS modules, suited to rooftops, are the first to pass the IEC61646 and 61730 certifications.
Friday 29th October 2010
The overall objective of the project is to develop a cost-effective and reliable integration of advanced SiC and GaN semiconductors in the European power microelectronics industry.