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Industry News



Wednesday 20th March 2013
The manufacturer of III-V multi-junction solar cells used a Veeco MBE system to achieve critical milestones in developing a production-ready commercial cell
Wednesday 20th March 2013
Japanese firm Rohm has reduced power loss in its new silicon carbide device, making it ideal for 1200V/180A inverters
Tuesday 19th March 2013
The company expects to phase out manufacturing in its Newton Aycliffe, UK-based GaAs pHEMT facility and transition most GaAs manufacturing to its GaAs HBT manufacturing facility in North Carolina
Monday 18th March 2013
The EML-TOSA device will help to downsize facilities and expand high-speed 40Gbps optical transmission networks
Friday 15th March 2013
Platform enables cost-effective R&D of silicon photonic ICs for high-performance optical transceivers
Friday 15th March 2013
The firm believes this is a major milestone for GaN power electronics as JEDEC qualification of gallium nitride-on-silicon. It will enable mass adoption price points for devices providing dramatically improved power efficiency
Thursday 14th March 2013
The joint effort will enhance manufacturing and market analysis, key requirements for sustainable deployment of solar PV energy
Thursday 14th March 2013
Foundry Global Communication Semiconductors will provide the Canadian based firm with a complete range of indium phosphide wafer processing services. OneChip will also use IQE's epitaxial growth services to produce its InP PICs for the data centre interconnect and passive optical network markets
Wednesday 13th March 2013
The firm's fully integrated indium phosphide devices prevent the complicated steps required by CMOS silicon and VCSEL processess
Tuesday 12th March 2013
The AIX G5+ system will be used to grow gallium nitride on silicon for power supplies, PV inverters/power conditioners, motor drives, and electric vehicles
Tuesday 12th March 2013
Single chip ultra-violet LEDs combine high efficiencies with high output powers
Tuesday 12th March 2013
The tool will be used for research and development of various antimonide and arsenide-based III-V optoelectronic devices
Tuesday 12th March 2013
The firm has developed an indium phosphide device for 100G coherent CFP2. The module enables a new generation of pluggable devices for metro and long-haul markets
Monday 11th March 2013
The MBE tool will be used for the preparation of silicon and germanium-based thin nanostructured layers
Monday 11th March 2013
Thanks to UV curing, UV LEDs should become a $270 million business by 2017, and could hit $300 million if new applications boom
Friday 8th March 2013
Many of the largest players in the compound semiconductor industry were acknowledged by their customers in the voting process
Thursday 7th March 2013
Advances in chip technology, the benefits brought by the latest manufacturing tools and insights into market trends all featured at CS International Conference.
Wednesday 6th March 2013
The firm's III-nitride based LED bulb is shaped like a traditional light bulb but works more efficiently and lasts 25 times longer. It provides a compact optically balanced light source within a real glass bulb to deliver warm light to consumers
Tuesday 5th March 2013
The firm's new technology builds on its basic GaAs approach, but implements a second junction with indium gallium phosphide (InGaP) as the absorber on top of the base cell. The technology will enable significant battery life extension in mobile devices
Tuesday 5th March 2013
The result builds on the previous GaAs (gallium arsenide) based VCSEL milestone. It is a further verification that III-Vs can compete with silicon CMOS in WDM capable optoelectronic devices and functions, FETs and bipolar devices
Tuesday 5th March 2013
The firm will show how its indium phoshide based platform, which enables integrated OTN switching and intelligent networking, can lower total cost of ownership for cable operators
Tuesday 5th March 2013
A new white paper written by SEMI analysts contains recommendations to move beyond trade litigation and encourage an accelerated path towards dispute resolution
Monday 4th March 2013
The firm's InP (indium phosphide) based DTN-X platform will provide links between Italy, Greece, Turkey, Israel and Cyprus
Monday 4th March 2013
The company's QC3 diffractometer is suited for analysing III-V semiconductor and nitride based LEDs. The production worthy system can accommodate up to 20 wafers in a single measurement process