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Industry News


Friday 18th May 2012
The novel formulation boosts efficiency in copper indium gallium (di)selenide solar sells
Friday 18th May 2012
A Japanese firm is planning on developing a range of LED applications that incorporate Nanoco's red and green quantum dots including the backlighting of LCD displays and LED-based general lighting
Wednesday 16th May 2012
The multi-junction solar cell provider will provide solar panels composed of indium gallium phosphide and indium gallium arsenide on a germanium substrate for the soil moisture active passive (SMAP) mission
Tuesday 15th May 2012
A new report says silicon manufacturer Broadcom and compound semiconductor supplier TriQuint are good examples that illustrate that the semiconductor industry is bouncing back
Tuesday 15th May 2012
The fast switching, high current handling and superior thermal properties of silicon carbide devices are ideal for solar inverters, SMPS, PFC circuits, induction heating, UPS and motor drives
Friday 11th May 2012
The two firms aim to further accelerate development of the gallium nitride-on-silicon process for LED chips
Thursday 10th May 2012
The firm is ordering more reactors to cope with growing demands for silicon carbide based products for the power electronics industry
Tuesday 8th May 2012
The University of Warsaw will use the reactor to pursue gallium nitride research
Tuesday 8th May 2012
The firm says its GaN-on-silicon transistors, diodes and modules are ultra-efficient, compact, easy-to-embed and enable higher frequency compact systems. Transphorm says the devices cut energy lost by 50 percent
Tuesday 8th May 2012
With direct drive technology, the firm's latest silicon carbide devices offer high efficiency levels for solar inverters
Monday 7th May 2012
The cadmium-telluride cells have been independently tested by manufacturer SGS Germany to officially confirmed the "record" numbers
Monday 7th May 2012
The flexible c-axis CHES furnaces allow Trinity Material to serve the rapidly expanding demand for large diameter sapphire substrates, ranging from four inches to eight inches
Friday 4th May 2012
Yes, according to U.S. firm Wiley Rein LLP. A new Five-Year Plan for solar is calling for escalation in Chinese government sponsorship of export-intensive, price-subsidised trade central planning
Friday 4th May 2012
The firms believe advanced packaging is the key to unlocking the vast potential of gallium nitride for high power applications
Thursday 3rd May 2012
Four CRIUS II-XL systems in a 19 x 4-inch wafer configuration and two G5 HT reactors in a 14 x 4-inch wafer configuration, will be used for the manufacturing of UHB gallium nitride based blue and white LEDs
Thursday 3rd May 2012
The company's gallium nitride-on-gallium nitride colour rich LED provides 95 CRI and an R9 over 90 without compromising brightness or efficiency
Wednesday 2nd May 2012
SETi’s germicidal UV LEDs, comprising aluminium gallium nitride, will be used to provide potable water to small groups from any source of fresh water
Wednesday 2nd May 2012
The firm is to develop highly-advanced, mixed-signal digital / RF gallium nitride circuits to pursue new opportunities in the MPC program
Wednesday 2nd May 2012
The firm has unveiled a new series of high-power silicon carbide devices, including a 1700V SiC MOSFET, which can reduce the cost of power electronic systems at the same time as providing improved energy efficiency
Wednesday 2nd May 2012
Silicon should overpower the sapphire and gallium nitride substrate markets with its reduced costs
Tuesday 1st May 2012
The firm has placed a multi-tool order to expand Silan’s manufacturing capacity for blue and green nitride based high brightness LEDs
Friday 27th April 2012
The Solar America Initiative Technology Pathway Partnership program focused on lowering the cost of large-scale commercial CIGS PV installations
Friday 27th April 2012
While the JV will focus on gallium nitride LEDs, SDK will concentrate on the production of LED chips made from other materials such as aluminium indium gallium phosphide and gallium arsenide
Friday 27th April 2012
The gallium nitride-on-silicon innovator will use the funding to research GaN X- and Ka- band power amplifiers