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Industry News


Monday 23rd January 2012
Higher data rates using III-V compound semiconductor VCSELs will enable faster data transfer in high volume consumer devices such as notebook computers and optical cables
Monday 23rd January 2012
His important contributions in materials physics over the last two decades include electro-optical effects in III-V compound semiconductors and as well as self-assembled quantum dots
Friday 20th January 2012
Investments in machine tools and telecom equipment, and substantial growth of sales into China, were keys to a strong recovery
Thursday 19th January 2012
The new group provides electronic-grade materials to the rapidly expanding LED, compound semiconductor, and solar panel markets
Thursday 19th January 2012
Due to lower than expected consumer adoption of LED-backlit LCD TVs, TV makers have changed their strategy to develop a product that utilises less power and lowers costs
Wednesday 18th January 2012
The UniSiC 1200V device is formed by stacking a specially designed low voltage silicon MOSFET above a normally-on silicon carbide JFET
Wednesday 18th January 2012
The completed project between Solar Frontier and enXco is set to become the world’s largest solar installations
Wednesday 18th January 2012
The compact devices which use aluminium indium gallium phosphide technology and indium gallium nitride materials provide high-performance auto-focus in the dark
Tuesday 17th January 2012
NREL confirms the cadmium telluride photovoltaic manufacturer's module has reached 14.4 percent total area efficiency
Tuesday 17th January 2012
The tool is used for advanced nano-lithography applications, particularly in direct writing of both R&D and production gallium arsenide devices
Tuesday 17th January 2012
Weakness in backlighting suggests that ASPs for certain markets were down as much as 45% in 2011. However, the GaN LED market is expected to recover between 2012 to 2015 and experience double-digit growth in 2013 and 2014 as the lighting market accelerates
Tuesday 17th January 2012
The planetary reactor will be used to manufacture next generation high voltage (5-15kV) silicon carbide devices with thicknesses over 100 microns
Tuesday 17th January 2012
The low-loss power devices contribute to better power efficiency in high-output electronic systems such as air conditioners, communication base stations, and solar power arrays
Monday 16th January 2012
Infinera's indium phosphide PICs will simplify optical transport for triple play, mobile backhaul, high-speed Internet and business broadband services
Monday 16th January 2012
The 1MW project will be the first in the Andhra Pradesh region to use Abound Solar's cadmium telluride modules
Friday 13th January 2012
A new versatile indium gallium arsenide device aims to maximise test time by simplifying measurement in analogue RF links and ultrafast digital communications
Friday 13th January 2012
The good news is that the wireless/WiFi market should recover in 2012 and the gallium arsenide IC market should register an 8% gain
Friday 13th January 2012
Osram's high-performance indium gallium nitride LED chips are fabricated on wafers with a diameter of 6 inches
Thursday 12th January 2012
The partnership is aimed at developing and marketing high bandwidth, harsh environment optoelectronic solutions for the military, aerospace, commercial aviation, and oil and gas industries
Thursday 12th January 2012
The Japanese global manufacturer of compound semiconductor devices acquires the germicidal LED technology development company
Thursday 12th January 2012
The advanced silicon carbide based platform doubles lumens-per-dollar to accelerate the adoption of LEDs
Wednesday 11th January 2012
The firm says it has made R & D breakthroughs in gallium nitride devices used for highly advanced, mixed-signal digital / RF circuits
Wednesday 11th January 2012
The new silicon germanium platform supports 4G product developments
Tuesday 10th January 2012
Eulitha's ultraviolet photolithography technology and EVG's automated mask aligner product platform should together provide a cheaper nanopatterning solution to manufacture HB-LEDs