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Industry News


Thursday 15th December 2011
The multiple Aixtron MOCVD G5 reactors will be used alongside the firm's two existing AIX 2800G4 systems
Thursday 15th December 2011
To support the booming LED market, Anhui Sanan Optoelectronics has had one of the largest NH3 facilities in the world installed. The plant has a supply capacity of 2,000 metrics tons per year
Wednesday 14th December 2011
Optogan opens sales hub in Koceali, Turkey for LED lamps and luminaires through a partnership agreement with Ledison Patan
Wednesday 14th December 2011
Cree is introducing a new thermal simulation service and advanced photometric testing
Tuesday 13th December 2011
The viability of Dow’s material has been confirmed in a new CVD process developed by the Belgium-based nanoelectronics research centre imec
Tuesday 13th December 2011
The agreement is designed to accelerate telecommunications and infrastructure innovations based on Cree’s high-power gallium nitride HEMT technology
Tuesday 13th December 2011
The investment for the expansion is in total approximately € 10 million. This will more than double the production capacities of gallium arsenide based lasers from 2013.
Tuesday 13th December 2011
Chinese energy producer GD Solar has chosen Isofoton's compound semiconductor solar cells for its Golmud plant. Over 200,000 residents in the area will benefit from the energy produced by the facility
Monday 12th December 2011
Frost & Sullivan says LED lamps and luminaires exhibit the strongest growth trends among all lighting technologies
Monday 12th December 2011
SMM aims to mass-produce 6-inch diameter sapphire substrates which are hoped to take over from 2-inch to 4-inch diameter wafers currently the most prevalent in the LED market
Monday 12th December 2011
The gallium nitride wafers, grown by a novel LPE technique, could be used in business projectors and vehicle headlights
Friday 9th December 2011
Soitec’s gallium indium phosphide, gallium indium arsenide and germanium based CPV solar cell plant is South Africa’s first commercial solar power plant.
Friday 9th December 2011
The company's SiC MOSFET chips can create new opportunities for energy efficiency in solar, telecom and industrial power applications.
Friday 9th December 2011
The LEDMax tool, which can be used for four to eight inch wafers, performs fast, accurate defect detection in III-V compound semiconductor epiwafers, sapphire, silicon, SiC and other transparent surface substrates.
Friday 9th December 2011
Osram's Pointled LED provides uniform, efficient illumination in a compact package for the Mercury, Mariner fingerprint sensor.
Thursday 8th December 2011
The three joint papers demonstrating the benefits of III-V compound semiconductors were presented at the conference in Washington DC on 7 December 2011.
Wednesday 7th December 2011
Japanese company Nippon Steel have developed a new method of producing 6" SiC wafers which can be used in large-area power devices for applications in automobiles and rapid-transit railways.
Wednesday 7th December 2011
Fraunhofer has been awarded for its work with CEA-LETI on developing reusable substrates for solar applications.
Wednesday 7th December 2011
The new company, SPP Technologies (SPT), is targeting device manufacturers of LEDs, RF power devices and MEMS.
Wednesday 7th December 2011
Defining the next steps for the Compound Semiconductor Industry,Dr. Philippe Roussel of Yole Développement will present the talk "Wide Bandgap device market update”.
Tuesday 6th December 2011
The Taiwanese firm will use the tool to manufacture indium gallium nitride epiwafers for HB-LEDs.
Tuesday 6th December 2011
The firm's III-V compound semiconductor multi-junction cells will be used to power the Cygnus cargo spacecraft to the International Space Station (ISS).
Tuesday 6th December 2011
IMS Research's "Global Monthly LED Lamp Retail Price Tracker" says that the biggest decline in LED lamp prices was seen in the Chinese market, where the average price fell 62% from $30 to $11.
Friday 2nd December 2011
The award is to develop gallium nitride class E power amplifiers that incorporate supply modulation and control enabled by novel power switch technology.