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Industry News


Tuesday 3rd December 2013
The III-nitride based LED works with a new conversion technology allowing much thinner converter layers which better dissipate the heat
Tuesday 3rd December 2013
The EVG720 UV-NIL system provides excellent throughput and low cost of ownership with integrated soft template replication capability
Tuesday 3rd December 2013
The company's latest gallium arsenide (GaAs) and gallium nitride (GaN) improve efficiency and reduce part counts
Monday 2nd December 2013
LED lighting and Smartphone application demands have led to sapphire substrate manufacturers production expansions
Monday 2nd December 2013
Samples of the UK firm's p/n PLW114050 LED are currently available in a CCT range from 6500K to 2700K, in an industry standard 3020 package. With a drive current of 60mA, the PLW114050 has a typical forward voltage of 3.2V
Friday 29th November 2013
The CEO of IQE has been acknowledged for his contributions to the semiconductor industry at Elektra 2013
Thursday 28th November 2013
The companies will bring together technologies to accelerate market establishment and volume production of high-reliability, high-performance gallium nitride devices
Tuesday 26th November 2013
The cell has a GaInP based top cell, a GaInAs based middle cell and a germanium bottom cell and was grown on a germanium substrate
Friday 22nd November 2013
The financing deal is the first ever obtained from the China Development Bank for a multi-megawatt CPV project in the Xinjiang province
Friday 22nd November 2013
Working with the State of New York, Soraa will open a Buffalo, New York, semiconductor fabrication plant and employ hundreds of staff
Thursday 21st November 2013
The systems, from Oxford Instruments, will be used for nanoscale science and engineering. They will be used for advanced RIE SiNx and SiO2 etching and deposition and silicon etching
Thursday 21st November 2013
The deployment of the InP (indium phosphide) based platform delivers long haul FlexCoherent 500 Gb/s super-channels
Wednesday 20th November 2013
The EVG PHABLE combines sub-micron resolution of lithography steppers with low cost of ownership and ease of use of proximity aligners for LEDs and other photonic components
Wednesday 20th November 2013
The system can be used for wafer sizes of 150 mm or 200 mm
Wednesday 20th November 2013
The firm uses Boeing's semiconductor bonding technology which could be be used to power high-power spacecraft and unmanned aerial vehicles
Tuesday 19th November 2013
This is the first time 1Tb/s of transmission capacity will be deployed on SCinet's network, delivered with the Infinera indium phosphide based DTN-X platform
Tuesday 19th November 2013
The compact module combines three colours and an independent phosphor-coated III-nitride white emitter, into a single LED package and simplifies colour mixing and integration
Monday 18th November 2013
The firm will use the cash to develop gallium nitride substrates for use in space electronics
Monday 18th November 2013
The cadmium telluride (CdTe) solar cell manufacturerwill partner with Japanese companies to develop, construct, and operate solar power plants, mitigating Japan's dependence on nuclear and natural gas fuel imports
Sunday 17th November 2013
Off-the-shelf LED room lights can be used for data transmission to achieve rates of up to 800 Mbit/s in laboratory conditions
Sunday 17th November 2013
The Z5-M1 series III-nitride based LEDs have been developed using new chip architecture and phosphor technology and come in an industry standard 3535 package
Thursday 14th November 2013
The firm is also sampling high power GaAs/AlGaAs based VCSELs for volume applications
Thursday 14th November 2013
The firm's new RedLink transceivers incorporate InGaP/InGaAlP/GaAs technology. They are suited to industrial applications and are compatible with versatile link connectors
Thursday 14th November 2013
The GaN (gallium nitride) power innovator continues to attract global customers across multiple applications