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Industry News



Wednesday 12th December 2012
The employees of the CIGS manufacturer mostly affected are dedicated to Global Solar's roofing product line
Monday 10th December 2012
The cell which reuses gallium arsenide is 20 percent efficient and is ultra-lightweight and flexible and has a potential of $0.45 per watt
Monday 10th December 2012
There are two variations available, and have been designed to enable tight linear high power UV LED arrays
Monday 10th December 2012
According to ABI Research, despite the downturn in 2012, the RF market in the foreseeable future in the Asia-Pacific region, particularly China, will remain the most important region
Monday 10th December 2012
The displays will incorporate Sharp's IGZO (Indium Gallium Zinc Oxide) technology and be built utilising existing LCD manufacturing infrastructure, and Qualcomm’s equity investment in Sharp.
Friday 7th December 2012
The indium gallium arsenide (InGaAs) triple junction based device has three photo-absorption layers which are stacked together
Friday 7th December 2012
The indium phosphide platform based on PIC technology features 500 gigabit per second (Gb/s) long haul super-channels on its nationwide fibre optic al network
Thursday 6th December 2012
Dynax Semiconductor is to receive its first Aixtron production system to manufacture gallium nitride on silicon carbide (SiC) and silicon substrates
Thursday 6th December 2012
The deal with Solar Junction, which produces 44 percent efficiency III-V wafers, should position IQE to become one of the key epiwafer suppliers to the CPV market
Thursday 6th December 2012
The III-V gallium arsenide (GaAs) based monolithic platform could change the roadmap for smartphones, tablet and wearable computers
Thursday 6th December 2012
Sagem will transfer to Sofradir its indium antimonide (InSb) and indium gallium arsenide (InGaAs) technology
Wednesday 5th December 2012
At 930mW the 850nm chip, from an operating current of 1A, has a light output (under lab conditions) 25 percent higher than that of many of the chips currently available
Wednesday 5th December 2012
The newly formed firm will use the reactors to manufacture III-nitride HB-LED wafers
Wednesday 5th December 2012
These devices, many based on indium phosphide (InP) and gallium arsenide (GaAs) technology, have changed the dynamics of the optical network industry
Tuesday 4th December 2012
First Solar will work with Zhenfa to deploy its cadmium telluride modules to power up the Xinjiang province
Tuesday 4th December 2012
The firm has secured a contract to produce indium phosphide wafers for lasers in telecommunications
Tuesday 4th December 2012
The ICOS WI-2280 system is designed to provide manufacturers with greater flexibility, reduced cost of ownership and improved efficiency
Monday 3rd December 2012
The indium phosphide (InP) platform based on PIC technology demo spanned Manhattan to Upton in New York
Monday 3rd December 2012
As well as increasing brightness, the firm maintains its latest technology lowers LED lighting costs considerably
Friday 30th November 2012
A multiport SiC device accommodates all the required voltages from a single, compact unit, allowing each system to be optimised for maximum efficiency
Friday 30th November 2012
Yes, according to Samsung. Rather than a gallium arsenide power amplifier, the mass produced 3G Samsung Galaxy Appeal is one of the first phones incorporating a silicon CMOS power amplifier
Thursday 29th November 2012
CS International are pleased to announce Bryan Bothwell, Strategy and Business Development Manager for TriQuint Semiconductor has been confirmed as a guest speaker for the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013. His presentation will be on Maximizing Gallium Nitride Product Solutions and Foundry Services for Advanced RF Design Success.
Wednesday 28th November 2012
The indium phosphide (InP) PIC provider and its Japanese partner says that this is a milestone for delivery of high capacity optical transmission over DSF fibre
Wednesday 28th November 2012
Skyworks, RFMD, Avago, TriQuint and Murata, to compete in this segment using GaAs, CMOS, RF MEMS and voltage-dependent dielectric variable capacitor technologies