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Industry News


Monday 20th June 2011
Telindus will deploy Infinera’s indium phosphide based PICs to provide broadband, radio and television services in northwest Spain.
Monday 20th June 2011
The unique Tesla probe systems with CT-3100/3200 Curve Tracers address high-voltage, high-power measurement requirements of silicon carbide and gallium nitride devices.
Monday 20th June 2011
The company says that extraction of light generated inside its single junction gallium arsenide based solar devices is critical.
Saturday 18th June 2011
The advanced feature set of the HXT/R4 family enables customers to optimise the trade-off between power dissipation and performance of the optical link.
Friday 17th June 2011
Soitec will provide its III-V multi-junction Concentrix solar cells under the partnership in the Mediterranean Solar Plan.
Friday 17th June 2011
The new facility expects to ramp up to volume production in less than eight months.
Thursday 16th June 2011
The company is responding to increased demand for volume shipments of high-speed coherent fibre optic transport systems.
Wednesday 15th June 2011
The firm has added the MOCVD system to Its China fab. The Maxbright reactor delivers up to a 500% productivity gain and 2.5x increase in footprint efficiency over the K465i system.
Tuesday 14th June 2011
Following Veeco’s grant of $4 million from the US government, the two firms will unite to develop next generation LED manufacturing equipment.
Tuesday 14th June 2011
The reactors, to be used for indium gallium nitride HB LED production, deliver up to a 500% productivity gain and a 2.5x increase in footprint efficiency over the K465i system.
Friday 10th June 2011
In its collaboration with Interoute, Infinera which uses indium phosphide technology in its PICs, won the award for its contribution to high capacity European networks.
Friday 10th June 2011
The smartphone market is expected to grow more than four times the rate of the overall mobile phone market in 2011 and shipments of smartphones should approach one billion in 2015.
Friday 10th June 2011
The MESSENGER probe which incorporates gallium arsenide multi-junction solar cells is able to operate in extreme temperatures and will orbit 730 times around Mercury for a year.
Thursday 9th June 2011
The firm’s has so far produced enough cadmium telluride solar modules to power almost 2 million households with electricity. The firm has also started manufacturing modules in Germany ahead of schedule.
Thursday 9th June 2011
The Chinese university’s first Aixtron epitaxial growth system for gallium nitride LEDs is a 3x2-inch CCS system and was chosen for its versatility and low material consumption.
Thursday 9th June 2011
The firm which uses a patented III-N PVDNC process, is also seeking partnerships with bulk aluminium nitride materials developers who are interested in improving the optical properties of their materials.
Thursday 9th June 2011
The “GRATE” multiyear program will develop up to 500GHz devices and employ the use of grating masks combined with conventional photolithography.
Thursday 9th June 2011
The luminaires from LI-EX employ 15,000 cold-white Golden Dragon Plus LEDs and 50,000 warm-white TopLEDs in the entrance area of the new "Stachus Passagen" in Munich.
Thursday 9th June 2011
The US DOE has awarded a total of $14.8 million to accelerate the adoption of technologies that reduce costs and enhance product quality in SSL lighting. Other recipients include Cree, Lumileds, Soraa, Moser Baer and three US universities.
Thursday 9th June 2011
The Smart Lighting ERC at Rensselaer Polytechnic Institute has engaged key industrial partners including Epistar and Osram to foster and guide LED innovations.
Wednesday 8th June 2011
The firm says its NPA1003 GaN-on-Silicon MMIC enables the world’s smallest 5W 20-1500 MHz PA solution.
Wednesday 8th June 2011
The aim of the visit was for the US to become acquainted with Russian industry innovation and to search for possible ways to implement joint projects in energy and energy efficiency.
Wednesday 8th June 2011
The firm’s gallium nitride based products continue to advance power transistor technology to enable next-generation pulsed radar and other mission-critical systems.
Wednesday 8th June 2011
The 65V gallium nitride process succeeds the firm’s GaN1 process for 48V and enables miniature, 0.5kW power devices with high operating efficiency for L- and S-Band military and civilian radar applications.