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Industry News


Monday 4th July 2011
The German based firm has introduced what it says is the first solar cell processing tool to clean rear side and edges in one step and has already received orders for several systems.
Monday 4th July 2011
The UK based firm, which was launched last week, aims to revolutionise silicon carbide power devices and has received investments of over £150,000.
Monday 4th July 2011
The manufacturer of MOCVD equipment will provide one CRIUS II system and one AIXG5HT system at SINANO’s facility to train its customers and potential customers’ engineers.
Monday 4th July 2011
Nitride Solutions is developing a manufacturing technology that hopes to deliver high-volume, low-cost aluminium nitride substrates with defect rates 10 times lower than substrates currently on the market.
Monday 4th July 2011
Industrifonden is banking on solar cell company Sol Voltaic’s gallium arsenide based nanowire solar cells to bring in the money.
Friday 1st July 2011
The organisations will jointly develop technology for next-generation gallium nitride power semiconductors and LEDs on 200 mm diameter silicon substrates. They aim to enhance properties and reduced production costs.
Friday 1st July 2011
The highly productive PECVD system will be used for the manufacture of metal alloy III-V nitride based LED chips.
Friday 1st July 2011
The firm is using its indium phosphide based PICs to provide critical support to Pacnet to restore 400Gb/s of capacity in four weeks.
Thursday 30th June 2011
Reduced copper production coupled with the application of new alternative technologies of copper extraction are both affecting the availability of tellurium.
Thursday 30th June 2011
Demand for gallium nitride LEDs in China has soared, prompting Aixtron to form a new subsidiary in Shanghai which should help accommodate requirements.
Wednesday 29th June 2011
The gallium nitride power amplifier grown on a silicon substrate offers approximately double the output performance of similar gallium arsenide based products.
Wednesday 29th June 2011
The 12x4-inch AIX 2600G3 IC reactor will be used for research and development.
Wednesday 29th June 2011
The company is expanding total capacity by 5,000 tonnes per year in Japan, Taiwan and China to cope with demand for ammonia gas, which is used in many electronic applications including gallium nitride LEDs.
Tuesday 28th June 2011
Scientists will measure the performance, reliability and thermal stability of different types of solar cells, including CIGS and use electroluminescence, photoluminescence and thermography in characterisation.
Tuesday 28th June 2011
The new high-efficiency PA modules based on gallium indium phosphide / gallium arsenide HBT technology are ideal for embedded WLAN applications requiring small size, high efficiency and low battery-voltage operation.
Tuesday 28th June 2011
The solar innovator says that achieving this milestone project immediately after opening its gigawatt-scale factory in Japan highlights the commercial attraction of its CIS modules.
Tuesday 28th June 2011
The firm’s new low noise amplifiers provide flexible, highly-efficient linear solutions for mobile network base stations, repeaters, point-to-point radios, test and other high-performance applications.
Monday 27th June 2011
The new TMGa production plant, to be completed in 2012, will be three times the size of the existing unit. The second facility for TMIn manufacture will increase capacity by 400 % and should be completed by Dec 2011.
Sunday 26th June 2011
The firms will develop third-generation gallium nitride LEDs in the MODULED project which aims to simplify the functioning and assembly of current LED systems.
Friday 24th June 2011
The new financing will enable the firm to continue reducing power wastage with its gallium nitride power devices.
Friday 24th June 2011
The firm’s Malaysian plant also aims to produce 8-inch sapphire wafers in volume to cope with increasing demand from the global LED industry.
Friday 24th June 2011
The company’s new gallium nitride detectors incorporate a high off-state impedance transceiver and minimise loading other detectors connected to the input line.
Wednesday 22nd June 2011
Using indium gallium nitride on a silicon substrate, novel etching, layout and thermal management strategies, researchers have produced much smaller and lower temperature LEDs than current LEDs using the same electrical power.
Tuesday 21st June 2011
Since its purchase of 6 CRIUS 31x2-inch reactors last November, AquaLite is seeing a stronger demand for power chip gallium nitride based LEDs and is looking to the 55x2-inch CRIUS II to increase throughput.