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Industry News



Thursday 8th December 2011
The three joint papers demonstrating the benefits of III-V compound semiconductors were presented at the conference in Washington DC on 7 December 2011.
Wednesday 7th December 2011
Japanese company Nippon Steel have developed a new method of producing 6" SiC wafers which can be used in large-area power devices for applications in automobiles and rapid-transit railways.
Wednesday 7th December 2011
Fraunhofer has been awarded for its work with CEA-LETI on developing reusable substrates for solar applications.
Wednesday 7th December 2011
The new company, SPP Technologies (SPT), is targeting device manufacturers of LEDs, RF power devices and MEMS.
Wednesday 7th December 2011
Defining the next steps for the Compound Semiconductor Industry,Dr. Philippe Roussel of Yole Développement will present the talk "Wide Bandgap device market update”.
Tuesday 6th December 2011
The Taiwanese firm will use the tool to manufacture indium gallium nitride epiwafers for HB-LEDs.
Tuesday 6th December 2011
The firm's III-V compound semiconductor multi-junction cells will be used to power the Cygnus cargo spacecraft to the International Space Station (ISS).
Tuesday 6th December 2011
IMS Research's "Global Monthly LED Lamp Retail Price Tracker" says that the biggest decline in LED lamp prices was seen in the Chinese market, where the average price fell 62% from $30 to $11.
Friday 2nd December 2011
The award is to develop gallium nitride class E power amplifiers that incorporate supply modulation and control enabled by novel power switch technology.
Friday 2nd December 2011
Manz believes CIGS thin-film technology is the last step toward solar power, being able to compete with other sources of solar energy without subsidies.
Friday 2nd December 2011
Funding by Khosla Ventures and NEA will help to develop and commercialise blue and green lasers grown on non-polar and semi-polar gallium nitride substrates.
Thursday 1st December 2011
The JV LED manufacturing company involving Changzhi High Tech Industry Investment, China, and Arima Optoelectronics from Taiwan aims to boost HB LED capacity
Thursday 1st December 2011
The innovator of high reliability analogue and mixed signal semiconductors will acquire the outstanding shares of AnalogicTech for $5.80 per share in cash.
Thursday 1st December 2011
The firm's III-V compound semiconductor solar cells have a beginning-of-life conversion efficiency nearing 30% and the option for a patented, onboard monolithic bypass diode
Thursday 1st December 2011
The presentation will describe the potential for arsenide/antimonide based materials for integration into future ultra low voltage electronic devices.
Thursday 1st December 2011
The firm will provide systems which use III-V-based triple-junction solar cells incorporating gallium indium phosphide, gallium indium arsenide and germanium, to Focusic.
Wednesday 30th November 2011
Switching from a dry process to wet lowers capital and manufacturing costs, scalability, and better throughput for gallium nitride and indium gallium nitride LEDs.
Wednesday 30th November 2011
Communiqué calls on leaders to promote green growth and a climate resilient economy.
Wednesday 30th November 2011
Q-cells says this sets a world-record for the entire thin-film sector catching up with crystalline technology.
Wednesday 30th November 2011
The analogue control ICs, some of which incorporate gallium arsenide, enable MRI scanners; Skyworks is capitalising on the increasing RF content required in the medical market.
Wednesday 30th November 2011
The Lighting Market Analyst at IMS Research will give a presentation on “The Market for LEDs in Lighting”.
Tuesday 29th November 2011
His presentation is entitled, “Compound Semiconductor Markets: Current Status and Future Prospects”.
Tuesday 29th November 2011
The company reverses industry trends by exporting PV modules to Asia.
Tuesday 29th November 2011
The firm will use the systems to manufacture power devices.