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Industry News



Friday 8th July 2011
QuantaSol’s combination of compound semiconductor triple junction solar cell and MQW technology will be used to accelerate JDSU’s CPV product roadmap.
Thursday 7th July 2011
The three projects based on cadmium telluride technology are expected to create 1,400 jobs and generate approximately 1330 MWs of installed solar power in California.
Thursday 7th July 2011
Vertically integrated refiner and producer of high purity tellurium, tellurium-based compounds and other metals, Apollo Solar has developed a new tellurium based material for use in thermal exchange technology at oil transportation stations.
Thursday 7th July 2011
The firm has achieved more than 10,000 hours lifetime on its aluminium gallium nitride UVTOP ultraviolet LEDs.
Wednesday 6th July 2011
The 16x4inch or 69x2inch tool for gallium nitride based LED production has been unveiled by German headquartered compound semiconductor equipment manufacturer, Aixtron.
Tuesday 5th July 2011
Capricorn Cleantech Fund, Robert Bosch Venture Capital (RBVC), and LRM jointly invested € 4 million in EpiGaN, to launch volume production of gallium nitride-on-silicon wafers.
Tuesday 5th July 2011
The company says its latest through-hole indium gallium nitride and phosphide LED series reduce power consumption and provide consistent light from all angles.
Monday 4th July 2011
The German based firm has introduced what it says is the first solar cell processing tool to clean rear side and edges in one step and has already received orders for several systems.
Monday 4th July 2011
The UK based firm, which was launched last week, aims to revolutionise silicon carbide power devices and has received investments of over £150,000.
Monday 4th July 2011
The manufacturer of MOCVD equipment will provide one CRIUS II system and one AIXG5HT system at SINANO’s facility to train its customers and potential customers’ engineers.
Monday 4th July 2011
Nitride Solutions is developing a manufacturing technology that hopes to deliver high-volume, low-cost aluminium nitride substrates with defect rates 10 times lower than substrates currently on the market.
Monday 4th July 2011
Industrifonden is banking on solar cell company Sol Voltaic’s gallium arsenide based nanowire solar cells to bring in the money.
Friday 1st July 2011
The organisations will jointly develop technology for next-generation gallium nitride power semiconductors and LEDs on 200 mm diameter silicon substrates. They aim to enhance properties and reduced production costs.
Friday 1st July 2011
The highly productive PECVD system will be used for the manufacture of metal alloy III-V nitride based LED chips.
Friday 1st July 2011
The firm is using its indium phosphide based PICs to provide critical support to Pacnet to restore 400Gb/s of capacity in four weeks.
Thursday 30th June 2011
Reduced copper production coupled with the application of new alternative technologies of copper extraction are both affecting the availability of tellurium.
Thursday 30th June 2011
Demand for gallium nitride LEDs in China has soared, prompting Aixtron to form a new subsidiary in Shanghai which should help accommodate requirements.
Wednesday 29th June 2011
The gallium nitride power amplifier grown on a silicon substrate offers approximately double the output performance of similar gallium arsenide based products.
Wednesday 29th June 2011
The 12x4-inch AIX 2600G3 IC reactor will be used for research and development.
Wednesday 29th June 2011
The company is expanding total capacity by 5,000 tonnes per year in Japan, Taiwan and China to cope with demand for ammonia gas, which is used in many electronic applications including gallium nitride LEDs.
Tuesday 28th June 2011
Scientists will measure the performance, reliability and thermal stability of different types of solar cells, including CIGS and use electroluminescence, photoluminescence and thermography in characterisation.
Tuesday 28th June 2011
The new high-efficiency PA modules based on gallium indium phosphide / gallium arsenide HBT technology are ideal for embedded WLAN applications requiring small size, high efficiency and low battery-voltage operation.
Tuesday 28th June 2011
The solar innovator says that achieving this milestone project immediately after opening its gigawatt-scale factory in Japan highlights the commercial attraction of its CIS modules.
Tuesday 28th June 2011
The firm’s new low noise amplifiers provide flexible, highly-efficient linear solutions for mobile network base stations, repeaters, point-to-point radios, test and other high-performance applications.